Light induced photovoltaic and pyroelectric effects in ferroelectric BaTiO₃ film based Schottky interface for self-powered and flexible multi-modal logic gates

Abstract

Optoelectronic logic gates have emerged as one of the key candidates for the creation of next generation logic devices. However, current optoelectronic logic gates can provide only one or two logic gates, severely limiting their applications. Here we report a self-powered and mechanically flexible device based on a BaTiO₃ ferroelectric film to produce multi-modal logic gates. By exploiting the photo-induced photovoltaic and pyroelectric effects of a Schottky junction which is created between BaTiO₃ and LaNiO₃, the device is able to provide five different optoelectronic logic gates, which can be operated using input lasers of different wavelength (405 or 785 nm). The mode of operation of the logic gate can be switched by controlling the wavelength and intensity of the input laser, where the switching process is both lossless and reversible. A logic gate array was designed to conduct the five logic operations, with 100% accuracy, thereby providing application potential for the Internet of Things, big data, and secure solutions for data processing and transmission.

Keywords

BaTiO₃ / flexible / optoelectronic logic gates / self-powered

References

[1] Haffner C, Heni W, Fedoryshyn Y, et al. All-plasmonic Mach-Zehnder modulator enabling optical high-speed communication at the microscale. Nat Photonics. 2015;9(8):525-528.

[2] Kim YL, Jung HY, Park S, et al. Voltage-switchable photocurrents in single-walled carbon nanotube-silicon junctions for analog and digital optoelectronics. Nat Photonics. 2014;8(3):239-243.

[3] Willner AE, Wang J, Huang H. A different angle on light communications. Science. 2012;337(6095):655-656.

[4] Purusothaman Y, Alluri NR, Chandrasekhar A, Venkateswaran V, Kim SJ. Piezophototronic gated optofluidic logic computations empowering intrinsic reconfigurable switches. Nat Commun. 2019;10(1):4381.

[5] Shuang W, Xuan P, Lingyuan L, et al. Nonvolatile van der Waals heterostructure phototransistor for encrypted optoelectronic logic circuit. ACS Nano. 2022;16(3):4528-4535.

[6] Kim W, Kim H, Yoo TJ, et al. Perovskite multifunctional logic gates via bipolar photoresponse of single photodetector. Nat Commun. 2022;13(1):720.

[7] Jeyavijayan R, Michael S, Ozgur S, Ramesh K. Security analysis of integrated circuit camouflaging. Proceedings of the 2013 ACM SIGSAC Conference on Computer & Communications Security, Berlin, Germany, Association for Computing Machinery. 2013.

[8] Rajendran J, Karri R, Wendt JB, et al. Nano meets security: exploring Nanoelectronic devices for security applications. Proc IEEE. 2015;103(5):829-849.

[9] Kim SH, Kim JH, Choi JW, et al. All-optical half adder using cross gain modulation in semiconductor optical amplifiers. Opt Express. 2006;14(22):10693-10698.

[10] Taraphdar C, Chattopadhyay T, Roy JN. Mach-Zehnder interferometer-based all-optical reversible logic gate. Opt Laser Technol. 2010;42(2):249-259.

[11] Pallavi S, Kr TD, Shikha J, Dixit HK. All-optical logic gates: designs, classification, and comparison. Adv Opt Techno. 2014;2014:75083.

[12] Zeng SQ, Zhang Y, Li BJ, Pun EYB. Ultrasmall optical logic gates based on silicon periodic dielectric waveguides. Photonic Nanostruct. 2010;8(1):32-37.

[13] Bie YQ, Liao ZM, Zhang HZ, et al. Self-powered, ultrafast, visible-blind UV detection and optical logical operation based on ZnO/GaN nanoscale p-n junctions. Adv Mater. 2011;23(5):649-654.

[14] Zhao JH, Zhou ZY, Wang H, et al. A boolean OR gate implemented with an optoelectronic switching memristor. Appl Phys Lett. 2019;115(15):153504.

[15] Ma Z, Yang LJ, Liu LJ, et al. Silicon-waveguide-integrated carbon nanotube optoelectronic system on a single chip. ACS Nano. 2020;14(6):7191-7199.

[16] Kim J, Lee HC, Kim KH, et al. Photon-triggered nanowire transistors. Nat Nanotechnol. 2017;12(10):963-968.

[17] Chenguang Z, Xingxia S, Huawei L, et al. Nonvolatile MoTe₂ p–n diodes for optoelectronic logics. ACS Nano. 2019;13(6):7216-7222.

[18] Yang CM, Chen TC, Verma D, et al. Bidirectional all-optical synapses based on a 2D Bi₂O₂Se/graphene hybrid structure for multifunctional optoelectronics. Adv Funct Mater. 2020;30(30):2001598.

[19] Bangsen O, Kewei Z, Ya Y. Photocurrent polarity controlled by light wavelength in self-powered ZnO nanowires/SnS photodetector system. iScience. 2018;2(1):16-23.

[20] Ouyang BS, Wang YH, Zhang RY, et al. Dual-polarity output response-based photoelectric devices. Cell Rep Phys Sci. 2021;2(5):100418.

[21] Ouyang BS, Zhao HQ, Wang ZL, Yang Y. Dual-polarity response in self-powered ZnO NWs/Sb₂Se₃ film heterojunction photodetector array for optical communication. Nano Energy. 2020;68(68):104312.

[22] Wang DH, Liu X, Kang Y, et al. Bidirectional photocurrent in p-n heterojunction nanowires. Nat Electron. 2021;4(9):645-652.

[23] Podborska A, Suchecki M, Mech K, Marzec M, Pilarczyk K, Szaciłowski K. Light intensity-induced photocurrent switching effect. Nat Commun. 2020;11(1):854.

[24] Wu L, Ji Y, Dan HY, et al. A multifunctional optical-thermal logic gate sensor array based on ferroelectric BiFeO₃ thin films. Inf Dent. 2023;5(5):e12414.

[25] Jie J, Yugandhar B, Chun-Wei H, et al. Flexible ferroelectric element based on van der Waals heteroepitaxy. Sci Adv. 2017;3(6):e1700121.

[26] Yang MM, Luo ZD, Mi Z, Zhao J, et al. Piezoelectric and pyroelectric effects induced by interface polar symmetry. Nature. 2020;584(7821):377-381.

[27] Cui BY, Fan Z, Li WJ, et al. Ferroelectric photosensor network: an advanced hardware solution to real-time machine vision. Nat Commun. 2022;13(1):1707.

[28] Hu L, Dalgleish S, Matsushita MM, Yoshikawa H, Awaga K. Storage of an electric field for photocurrent generation in ferroelectric-functionalized organic devices. Nat Commun. 2014;5(1):3279.

[29] Wang HL, Bai Y, Ning XK, Wang ZJ. Enhanced electrical properties in ferroelectric thin films on conductive Au-LaNiO₃ nanocomposite electrodes via modulation of Schottky potential barrier. RSC Adv. 2015;5(126):104203-104209.

[30] Sluka T, Tagantsev AK, Bednyakov P, Setter N. Free-electron gas at charged domain walls in insulating BaTiO₃. Nat Commun. 2013;4(1):1808.

[31] Milliron DJ, Hill IG, Shen C, Kahn A, Schwartz J. Surface oxidation activates indium tin oxide for hole injection. J Appl Phys. 2000;87(1):572-576.

[32] Zhang W, Qiu F, Li Y, et al. Lattice defect engineering enables performance-enhanced MoS₂ photodetection through a paraelectric BaTiO₃ dielectric. ACS Nano. 2021;15(8):13370-13379.

[33] Xue F, He X, Ma YC, et al. Unraveling the origin of ferroelectric resistance switching through the interfacial engineering of layered ferroelectric-metal junctions. Nat Commun. 2021;12(1):7291.

[34] Spanier JE, Fridkin VM, Rappe AM, et al. Power conversion efficiency exceeding the Shockley-Queisser limit in a ferroelectric insulator. Nat Photonics. 2016;10(9):611-616.

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