Active pixel image sensor array for dual vision using large-area bilayer WS2
Arindam Bala, Mayuri Sritharan, Na Liu, Muhammad Naqi, Anamika Sen, Gyuchull Han, Hyun Yeol Rho, Youngki Yoon, Sunkook Kim
Active pixel image sensor array for dual vision using large-area bilayer WS2
Transition metal dichalcogenides (TMDs) are a promising candidate for developing advanced sensors, particularly for day and night vision systems in vehicles, drones, and security surveillance. While traditional systems rely on separate sensors for different lighting conditions, TMDs can absorb light across a broad-spectrum range. In this study, a dual vision active pixel image sensor array based on bilayer WS2 phototransistors was implemented. The bilayer WS2 film was synthesized using a combined process of radio-frequency sputtering and chemical vapor deposition. The WS2-based thin-film transistors (TFTs) exhibit high average mobility, excellent Ion/Ioff, and uniform electrical properties. The optoelectronic properties of the TFTs array exhibited consistent behavior and can detect visible to near-infrared light with the highest responsivity of 1821 A W−1 (at a wavelength of 405 nm) owing to the photogating effect. Finally, red, green, blue, and near-infrared image sensing capabilities of active pixel image sensor array utilizing light stencil projection were demonstrated. The proposed image sensor array utilizing WS2 phototransistors has the potential to revolutionize the field of vision sensing, which could lead to a range of new opportunities in various applications, including night vision, pedestrian detection, various surveillance, and security systems.
dual vision / image sensors / infrared wavelength detection / phototransistors / thin-film transistor arrays / transition metal dichalcogenides
[1] |
Wang QH, Kalantar-Zadeh K, Kis A, Coleman JN, Strano MS. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat Nanotechnol. 2012;7(11):699-712.
|
[2] |
Xia F, Wang H, Xiao D, Dubey M, Ramasubramaniam A. Two-dimensional material nanophotonics. Nat Photon. 2014;8(12):899-907.
|
[3] |
Furchi MM, Polyushkin DK, Pospischil A, Mueller T. Mechanisms of photoconductivity in atomically thin MoS2. Nano Lett. 2014;14(11):6165-6170.
|
[4] |
Dutta R, Bala A, Sen A, et al. Optical enhancement of indirect bandgap two-dimensional transition metal dichalcogenides for multi-functional optoelectronic sensors. Adv Mater. 2023;35(46):e2303272.
|
[5] |
Naqi M, Cho Y, Bala A, Kim S. The trend of synthesized 2D materials toward artificial intelligence: memory technology and neuromorphic computing. Mater Today Electron. 2023;5:100052.
|
[6] |
Tsai D-S, Liu KK, Lien DH, et al. Few-layer MoS2 with high broadband photogain and fast optical switching for use in harsh environments. ACS Nano. 2013;7(5):3905-3911.
|
[7] |
Yao JD, Zheng ZQ, Shao JM, Yang GW. Stable, highly-responsive and broadband photodetection based on large-area multilayered WS2 films grown by pulsed-laser deposition. Nanoscale. 2015;7(36):14974-14981.
|
[8] |
Wu D, Guo C, Wang Z, et al. A defect-induced broadband photodetector based on WS2/pyramid Si 2D/3D mixed-dimensional heterojunction with a light confinement effect. Nanoscale. 2021;13(31):13550-13557.
|
[9] |
Hwang A, Park M, Park Y, et al. Visible and infrared dual-band imaging via Ge/MoS2 van der Waals heterostructure. Sci Adv. 2021;7(51):eabj2521.
|
[10] |
Wu P, Ye L, Tong L, et al. Van der Waals two-color infrared photodetector. Light Sci Appl. 2022;11(1):6.
|
[11] |
Kim S-G, Kim SH, Park J, et al. Infrared detectable MoS2 phototransistor and its application to artificial multilevel optic-neural synapse. ACS Nano. 2019;13(9):10294-10300.
|
[12] |
Tong X-W, Lin YN, Huang R, et al. Direct tellurization of Pt to synthesize 2D PtTe2 for high-performance broadband photodetectors and NIR image sensors. ACS Appl Mater Interfaces. 2020;12(48):53921-53931.
|
[13] |
Liu N, Baek J, Kim SM, et al. Improving the stability of high-performance multilayer MoS2 field-effect transistors. ACS Appl Mater Interfaces. 2017;9(49):42943-42950.
|
[14] |
Park H, Liu N, Kim BH, et al. Exceptionally uniform and scalable multilayer MoS2 phototransistor array based on large-scale MoS2 grown by RF sputtering, electron beam irradiation, and sulfurization. ACS Appl Mater Interfaces. 2020;12(18):20645-20652.
|
[15] |
Naqi M, Kang MS, liu N, et al. Multilevel artificial electronic synaptic device of direct grown robust MoS2 based memristor array for in-memory deep neural network. npj 2D Mater Appl. 2022;6(1):53.
|
[16] |
Bala A, Sen A, Kim YH, et al. Large-area MoS2 nanosheets with triangular nanopore arrays as active and robust electrocatalysts for hydrogen evolution. J Phys Chem C. 2022;126(23):9696-9703.
|
[17] |
Im H, Bala A, So B, Kim YJ, Kim S. Customization of MoS2 phototransistors via thiol-based functionalization. Adv Electron Mater. 2021;7(11):2100644.
|
[18] |
Im H, Liu N, Bala A, Kim S, Choi W. Large-area MoS2-MoOx heterojunction thin-film photodetectors with wide spectral range and enhanced photoresponse. APL Mater. 2019;7(6):061101.
|
[19] |
Park H, Rahman MM, Bala A, et al. Nanoscale patterning on layered MoS2 with stacking-dependent morphologies and optical tunning for phototransistor applications. Mater Today Nano. 2023;23:100367.
|
[20] |
Park H, Sen A, Kaniselvan M, et al. A wafer-scale nanoporous 2D active pixel image sensor matrix with high uniformity, high sensitivity, and rapid switching. Adv Mater. 2023;35(14):2210715.
|
[21] |
Bala A, Sen A, Shim J, Gandla S, Kim S. Back-end-of-line compatible large-area molybdenum disulfide grown on flexible substrate: enabling high-performance low-power memristor applications. ACS Nano. 2023;17(14):13784-13791.
|
[22] |
Baek S, Kim J, Choo S, et al. Low-temperature carrier transport mechanism of wafer-scale grown polycrystalline molybdenum disulfide thin-film transistor based on radio frequency sputtering and sulfurization. Adv Mater Interfaces. 2022;9(15):2102360.
|
[23] |
Sen A, Shim J, Bala A, Park H, Kim S. Boosting sensitivity and reliability in field-effect transistor-based biosensors with nanoporous MoS2 encapsulated by non-planar Al2O3. Adv Funct Mater. 2023;33(42):2301919.
|
[24] |
Stankiewicz J, Sesé J, Balakrishnan G, Fisk Z. Electrical transport properties of CaB6. Phys Rev B Condens Matter Mater Phys. 2014;90(15):8174-8181.
|
[25] |
Liu X, Hu J, Yue C, et al. High performance field-effect transistor based on multilayer tungsten disulfide. ACS Nano. 2014;8(10):10396-10402.
|
[26] |
Zhao W, Ghorannevis Z, Chu L, et al. Evolution of electronic structure in atomically thin sheets of WS2 and WSe2. ACS Nano. 2013;7(1):791-797.
|
[27] |
Zhu ZY, Cheng YC, Schwingenschlögl U. Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors. Phys Rev B Condens Matter Mater Phys. 2011;84(15):153402.
|
[28] |
Ovchinnikov D, Allain A, Huang Y-S, Dumcenco D, Kis A. Electrical transport properties of single-layer WS2. ACS Nano. 2014;8(8):8174-8181.
|
[29] |
Elías AL, Perea-López N, Castro-Beltrán A, et al. Controlled synthesis and transfer of large-area WS2 sheets: from single layer to few layers. ACS Nano. 2013;7(6):5235-5242.
|
[30] |
Kim BH, Gu HH, Yoon YJ. Large-area and low-temperature synthesis of few-layered WS2 films for photodetectors. 2D Mater. 2018;5(4):045030.
|
[31] |
Balasubramanyam S, Merkx MJM, Verheijen MA, Kessels WMM, Mackus AJM, Bol AA. Area-selective atomic layer deposition of two-dimensional WS2 nanolayers. ACS Mater Lett. 2020;2(5):511-518.
|
[32] |
Luo Y, Remillard J, Hoetzer D. Pedestrian detection in near-infrared night vision system. In Proceedings of IEEE Intelligent Vehicles Symposium, pp. 51–58. 2010.
|
[33] |
Hong S, Zagni N, Choo S, et al. Highly sensitive active pixel image sensor array driven by large-area bilayer MoS2 transistor circuitry. Nat Commun. 2021;12(1):3559.
|
[34] |
Xu J, Zhang J, Zhang W, Lee C-S. Interlayer nanoarchitectonics of two-dimensional transition-metal dichalcogenides nanosheets for energy storage and conversion applications. Adv Energy Mater. 2017;7(23):1700571.
|
[35] |
Berkdemir A, Gutiérrez HR, Botello-Méndez AR, et al. Identification of individual and few layers of WS2 using Raman spectroscopy. Sci Rep. 2013;3(1):1755.
|
[36] |
Zhao W, Ghorannevis Z, Amara KK, et al. Lattice dynamics in mono- and few-layer sheets of WS2 and WSe2. Nanoscale. 2013;5(20):9677-9683.
|
[37] |
Godel F, Zatko V, Carrétéro C, et al. WS2 2D semiconductor down to monolayers by pulsed-laser deposition for large-scale integration in electronics and spintronics circuits. ACS Appl Nano Mater. 2020;3(8):7908-7916.
|
[38] |
Reale F, Palczynski P, Amit I, et al. High-mobility and high-optical quality atomically thin WS2. Sci Rep. 2017;7(1):14911.
|
[39] |
van der Zande AM, Huang PY, Chenet DA, et al. Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide. Nat Mater. 2013;12(6):554-561.
|
[40] |
Rho HY, Bala A, Sen A, et al. Plasma-engineered amorphous metal oxide nanostructure-based low-power highly responsive phototransistor array for next-generation optoelectronics. ACS Appl Nano Mater. 2023;6(17):15990-15999.
|
[41] |
Bala A, Liu N, Sen A, et al. Low-temperature plasma-assisted growth of large-area MoS2 for transparent phototransistors. Adv Funct Mater. 2022;32(44):2205106.
|
[42] |
Sen A, Park H, Pujar P, et al. Probing the efficacy of large-scale nonporous IGZO for visible-to-NIR detection capability: an approach toward high-performance image sensor circuitry. ACS Nano. 2022;16(6):9267-9277.
|
[43] |
Lahiri J, Lin Y, Bozkurt P, Oleynik II, Batzill M. An extended defect in graphene as a metallic wire. Nat Nanotechnol. 2010;5(5):326-329.
|
[44] |
Pantelides ST. The electronic structure of impurities and other point defects in semiconductors. Rev Mod Phys. 1978;50(4):797-858.
|
[45] |
Han G, Kaniselvan M, Yoon Y. Photoresponse of MoSe2 transistors: a fully numerical quantum transport simulation study. ACS Appl Electron Mater. 2020;2(11):3765-3772.
|
[46] |
Fang H, Hu W. Photogating in low dimensional photodetectors. Adv Sci. 2017;4(12):1700323.
|
[47] |
Kang HS, Choi CS, Choi WY, Kim DH, Seo KS. Characterization of phototransistor internal gain in metamorphic high-electron-mobility transistors. Appl Phys Lett. 2004;84(19):3780-3782.
|
[48] |
Park H, Lee J, Han G, et al. Nano-patterning on multilayer MoS2 via block copolymer lithography for highly sensitive and responsive phototransistors. Commun Mater. 2021;2(1):94.
|
[49] |
Zhao Q, Wang W, Carrascoso-Plana F, et al. The role of traps in the photocurrent generation mechanism in thin InSe photodetectors. Mater Horiz. 2020;7(1):252-262.
|
[50] |
Nur R, Tsuchiya T, Toprasertpong K, Terabe K, Takagi S, Takenaka M. High responsivity in MoS2 phototransistors based on charge trapping HfO2 dielectrics. Commun Mater. 2020;1(1):103.
|
[51] |
Choi HT, Kang JH, Ahn J, et al. Zero-dimensional PbS quantum dot–InGaZnO film heterostructure for short-wave infrared flat-panel imager. ACS Photonics. 2020;7(8):1932-1941.
|
[52] |
Lee YT, Kang JH, Kwak K, et al. High-performance 2D MoS2 phototransistor for photo logic gate and image sensor. ACS Photonics. 2018;5(12):4745-4750.
|
[53] |
Tang W. Electrical, Electronic and Optical Properties of MoS2 & WS2. Vol 125. New Jersey Institute of Technology; 2016.
|
[54] |
Chen CY. Theory of a modulated barrier photodiode. Appl Phys Lett. 1981;39(12):979-981.
|
/
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