Effect of 6H-SiC crystal growth shapes on thermo-elastic stress in the growing crystal

Abstract

The effect of 6H-SiC crystal growth shapes on the thermo-elastic stress distribution in the growing crystal was systematically investigated by using a finite element method. The thermo-elastic stress distribution in the crystal with a flat growth shape was more homogeneous than that in the crystals with concave and convex growth shapes, and the value of thermo-elasticity in the crystal with a flat growth shape was also smaller than that in the two other types of crystals. The maximum values of thermo-elastic stress appeared at interfaces between the crystal and the graphite lid. If the lid was of the same properties as 6H-SiC, the thermo-elastic stress would decrease in two orders of magnitude. Thus, to grow 6H-SiC single crystals of high quality, a transition layer of SiC formed by deposition or reaction is suggested; meanwhile the thermal field in the growth chamber should be adjusted to maintain the crystals with flat growth shapes.

Keywords

silicon carbide / thermo-elasticity / physical vapor transport / single crystals / crystal growth / finite element method

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