Perovskite memristors are usually fabricated by the traditional spin-coating method in a glove box, restricting them to small-area films. Herein, we blade-coated large-area three dimensional (3D) Cs0.09FA0.91PbI3 and one dimensional (1D) (CH3)3SPbI3 surface under air condition to create a heterojunction synaptic memristor with enhanced stability and functionality. The 3D/1D heterojunction memristor exhibits excellent resistive switching properties, with on/off ratio increasing from 10 to over 70, remaining stable after 300 cycles at 0.5 V, and retaining resistance states for over 103 s. Blade coating, a solution-based technique compatible with roll-to-roll processing, enables large-area fabrication (10 cm ×10 cm substrates) with cost-effectiveness, supporting scalability for mass production. The device successfully emulated synaptic plasticity, including long-term potentiation, long-term depression, paired-pulse facilitation, and spike frequency/voltage-dependent plasticity.
| [1] |
Huang Y, Ando T, Sebastian A, Chang MF, Yang JJ, Xia QF. Memristor-based hardware accelerators for artificial intelligence. Nat. Rev. Electr. Eng., 2024, 1(5):286.
|
| [2] |
Perera J, Balasubramaniam S, Somathilaka S, et al.Wet-neuromorphic computing: A new paradigm for biological artificial intelligence. IEEEIntell. Syst., 2025, 40(3):39.
|
| [3] |
P. Langner, F. Chiabrera, N. Alayo, et al., Solid-state oxide-ion synaptic transistor for neuromorphic computing, Adv. Mater., 37(2025), No. 7, art. No. e2415743.
|
| [4] |
S.S. Teja Nibhanupudi, A. Roy, D. Veksler, et al., Ultra-fest switching memristors based on two-dimensional materials, Nat. Commun., 15(2024), No. 1, art. No. 2334.
|
| [5] |
X.G. Duan, Z.L. Cao, K.K. Gao, et al., Memristor-based neuromorphic chips, Adv. Mater., 66(2244), No. 14, art. No. e2310704.
|
| [6] |
Z.H. Xiao, X.D. Xiao, L.B. Kong, et al., Preparation of MXene-based hybrids and their application in neuromorphic devices, Int. J. Extreme Manuf., 6(2024), No. 2, art. No. 022006.
|
| [7] |
Noh M, Park H, Kim S. Cognitive learning and neuromorphic systems using resistive switching random-access memory. ACS Appl. Electron. Mater., 2025, 7(6):2156.
|
| [8] |
C. Ganguly, S.S. Bezugam, E. Abs, M. Payvand, S. Dey, and M. Suri, Spike frequency adaptation: Bridging neural models and neuromorphic applications, Commun. Eng., 3(2024), art. No. 22.
|
| [9] |
Tian DS, Ke C, Sun B, et al.Quantum dot-based memristors for information processing and artificial intelligence applications. Nanoscale, 2025, 17(17):10485.
|
| [10] |
Li XT, Ke WJ, Traoré B, et al.Two-dimensional dion-jacobson hybrid lead iodide perovskites with aromatic diammonium cations. J. Am. Chem. Soc., 2019, 141(32):12880.
|
| [11] |
Chen K, Schünemann S, Song S, Tüysüz H. Structural effects on optoelectronic properties of halide perovskites. Chem. Soc. Rev., 2018, 47(18):7045.
|
| [12] |
Sharenko A, Toney MF. Relationships between lead halide perovskite thin-film fabrication, morphology, and performance in solar cells. J. Am. Chem. Soc., 2016, 138(2):463.
|
| [13] |
Hutter EM, Savenije TJ. Thermally activated second-order recombination hints toward indirect recombination in fully inorganic CsPbI3 perovskites. ACS Energy Lett., 2018, 3(9):2068.
|
| [14] |
X. Yan, W.Q. Fan, F.Y. Cheng, et al., Ion migration in hybrid perovskites: Classification, identification, and manipulation, Nano Today, 44(2022), art. No. 101503.
|
| [15] |
X.H. Cheng, Y. Han, and B.B. Cui, Fabrication strategies and optoelectronic applications of perovskite heterostructures, Adv. Opt. Mater., 10(2022), No. 5, art. No. 2102224.
|
| [16] |
Wang YY, Zhang ZY, Xu MK, et al.Self-doping memristors with equivalently synaptic ion dynamics for neuromorphic computing. ACS Appl. Mater. Interfaces, 2019, 11(27):24230.
|
| [17] |
Gritsenko KP, Krasovsky AM. Thin-film deposition of polymers by vacuum degradation. Chem. Rev., 2003, 103(9):3607.
|
| [18] |
Fadeev AV, Rudenko KV. To the issue of the memristor’s HRS and LRS states degradation and data retention time. Russ. Microelectron., 2021, 50(5):311.
|
| [19] |
A. Prakash, D. Jana, S. Samanta, and S. Maikap, Self-compliance-improved resistive switching using Ir/TaOx/W cross-point memory, Nanoscale Res. Lett., 8(2013), No. 1, art. No. 527.
|
| [20] |
Dash CS, Sahoo S, Prabaharan SRS. Resistive switching and impedance characteristics of M/TiO2−x/TiO2/M nanoionic memristor. Solid State Ionics, 2018, 324: 218.
|
| [21] |
Nakanishi H, Bishop KJM, Kowalczyk B, et al.Photoconductance and inverse photoconductance in films of functionalized metal nanoparticles. Nature, 2009, 460(7253):371.
|
| [22] |
Hota SS, Panda D, Choudhary RNP. Studies of structural, dielectric, conductivity, leakage current mechanism, and efficiency of complex electroceramic. Ceram. Int., 2024, 50(2):4031.
|
| [23] |
Chu L, Shen HY, Wei HD, Chen HY, Ma GQ, Yan WS. Morphology engineering of ZnO micro/nanostructures under mild conditions for optoelectronic application. Int. J. Miner. Metall. Mater., 2025, 32(2):498.
|
| [24] |
S. Kumar and R.S. Williams, Separation of current density and electric field domains caused by nonlinear electronic instabilities, Nat. Commun., 9(2018), No. 1, art. No. 2030.
|
| [25] |
D. Wu, W.H. Li, H.C. Liu, et al., Universal strategy for improving perovskite photodiode performance: Interfacial built-in electric field manipulated by unintentional doping, Adv. Sci., 8(2021), No. 18, art. No. 2101729.
|
| [26] |
Liu Q, Gao S, Xu L, et al.Nanostructured perovskites for nonvolatile memory devices. Chem. Soc. Rev., 2022, 51(9):3341.
|
| [27] |
W. Zhou, X.Y. Shen, X.L. Yang, J.J. Wang, and W. Zhang, Fabrication and integration of photonic devices for phase-change memory and neuromorphic computing, Int. J. Extreme Manuf., 6(2024), No. 2, art. No. 022001.
|
| [28] |
Younis A, Chu DW, Li SA. Voltage sweep modulated conductance quantization in oxide nanocomposites. J. Mater. Chem. C, 2014, 2(48):10291.
|
| [29] |
K.X. Sun, J.S. Chen, and X.B. Yan, The future of memristors: Materials engineering and neural networks, Adv. Funct. Mater., 31(2021), No. 8, art. No. 2006773.
|
| [30] |
J.C. Yang, J. Mun, S.Y. Kwon, S. Park, Z.N. Bao, and S. Park, Electronic skin: Recent progress and future prospects for skin-attachable devices for health monitoring, robotics, and prosthetics, Adv. Mater., 31(2019), No. 48, art. No. 1904765.
|
| [31] |
Roelfsema PR, Holtmaat A. Control of synaptic plasticity in deep cortical networks. Nat. Rev. Neurosci., 2018, 19(3):166.
|
| [32] |
Xue ZY, Xu YC, Jin CX, Liang YH, Cai ZH, Sun J. Halide perovskite photoelectric artificial synapses: Maeerials, devices, and applications. Nanoscale, 2023, 15(10):4653.
|
| [33] |
X. Pan, T.Y. Jin, J. Gao, C. Han, Y.M. Shi, and W. Chen, Stimuli-enabled artificial synapses for neuromorphic perception: Progress and perspectives, Small, 16(2020), No. 34, art. No. 2001504.
|
| [34] |
A. Ghanbari, A. Malyshev, M. Volgushev, and I.H. Stevenson, Estimating short-term synaptic plasticity from pre- and postsynaptic spiking, PLoS Comput. Biol., 13(2017), No. 9, art. No. e1005738.
|
| [35] |
Y.Q. Liu, M.R. Lian, W. Chen, and H.P. Chen, Recent advances in fabrication and functions of neuromorphic system based on organic field effect transistor, Int. J. Extreme Manuf., 6(2024), No. 2, art. No. 022008.
|
| [36] |
Kim MK, Lee JS. Short-term plasticity and long-term potentiation in artificial biosynapses with diffusive dynamics. ACS Nano, 2018, 12(2):1680.
|
| [37] |
Hu DC, Yang R, Jiang L, Guo X. Memristive synapses with photoelectric plasticity realized in ZnO1−x/AlOy heterojunction. ACS Appl. Mater. Interfaces, 2018, 10(7):6463.
|
| [38] |
S.I. Kim, Y. Lee, M.H. Park, et al., Dimensionality dependent plasticity in halide perovskite artificial synapses for neuromorphic computing, Adv. Electron. Mater., 5(2019), No. 9, art. No. 1900008.
|
| [39] |
Casarotto PC, Girych M, Fred SM, et al.Antidepressant drugs act by directly binding to TRKB neurotrophin receptors. Cell, 2021, 184(5):1299.
|
| [40] |
V.M. Rodriguez-Molina, A. Aertsen, and D.H. Heck, Spike timing and reliability in cortical pyramidal neurons: Effects of EPSC kinetics, input synchronization and background noise on spike timing, PLoS One, 2(2007), No. 3, art. No. e319.
|
| [41] |
Roy K, Jaiswal A, Panda P. Towards spike-based machine intelligence with neuromorphic computing. Nature, 2019, 575(7784):607.
|
| [42] |
Z.H. Huang, Y.R. Li, Y. Zhang, J.W. Chen, J. He, and J. Jiang, 2D multifunctional devices: From material preparation to device fabrication and neuromorphic applications, Int. J. Extreme Manuf., 6(2024), No. 3, art. No. 032003.
|
| [43] |
S.B. Hua, T. Jin, and X. Guo, Electrochemical anodic oxidation assisted fabrication of memristors, Int. J. Extreme Manuf., 6(2024), No. 3, art. No. 032008.
|
| [44] |
Pan YN, Zeng Q, Li LH, et al.Aqueous route to α-FAPbI3 microcrystals for efficient perovskite solar cells. Int. J. Miner. Metall. Mater., 2025, 32(9):2238.
|
| [45] |
Si HN, Zhao X, Liao QL, Zhang Y. Design and tailoring of patterned ZnO nanostructures for perovskite light absorption modulation. Int. J. Miner. Metall. Mater., 2024, 31(5):855.
|
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