Interface-bonding integration of perovskite wafer with TFT array for X-ray imaging

Abstract

Metal–halide perovskites have been successfully utilized in high-sensitivity direct X-ray detection, and the further integration of perovskites with pixel chips is crucial for X-ray imaging. In this study, an ingenious interface-bonding strategy is applied to integrate a polycrystalline CsPbBr₃ wafer with a thin-film transistor (TFT) array. A polyimide–CsPbBr₃ composite binder with satisfactory mechanical adhesion and optoelectronic properties is synthesized and used to integrate a freestanding CsPbBr₃ wafer with a TFT array. Under low-temperature annealing, interface reconstruction occurs with the in-situ formation of a homogeneous bridging structure between the CsPbBr₃ wafer and TFT array, achieving a multichannel X-ray imaging detector. The X-ray detector exhibits a high sensitivity of 4310 µC·Gy⁻¹·cm⁻² and low detection limit of 442 nGy·s⁻¹. The resulting imaging panel with pixels offers a satisfactory spatial resolution (2.2 LP·mm⁻¹) X-ray imaging.

Keywords

perovskite wafer / thin-film transistor array / bonding integration / X-ray imaging

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