Fabrication of Gradient Structured (Ta0.2Nb0.2Ti0.2Zr0.2Hf0.2)C-SiC Composites and Their High-Temperature Ablation Behavior
Xinnuo Wang , Cuiyan Li , Haibo Ouyang , Qian Yang , Tianzhan Shen
High-Temp. Mat. ›› 2026, Vol. 3 ›› Issue (3) : 10022
Porous high-entropy carbide ceramics (PHECs) exhibit excellent high-temperature stability and are considered promising candidates for thermal-protection applications. However, their interconnected pore structure facilitates oxygen ingress during ablation, resulting in accelerated oxidation and structural degradation. In this work, a gradient SiC-rich dense surface layer was constructed on porous (Ta0.2Nb0.2Ti0.2Zr0.2Hf0.2)C ceramics through phenolic-resin infiltration, carbonization, and reactive melt infiltration (RMI) of silicon. The resulting composites exhibited a hierarchical architecture consisting of a dense SiC-rich surface layer and a porous interior. The initial pore structure strongly influenced molten-Si infiltration and reaction behavior, leading to an increase in the thickness of the SiC-rich dense layer from 33.3 to 121.2 μm with increasing porosity. During ablation, oxidation of SiC generated SiO2, which interacted with refractory transition-metal oxides to form a SiO2-rich composite oxide layer that effectively suppressed oxygen diffusion and enhanced oxidation resistance. Consequently, the oxide-layer thickness decreased from 121.4 to 35.2 μm, accompanied by a significant reduction in the mass ablation rate. Among all samples, HEC-SiC5 exhibited the best ablation resistance, with a mass ablation rate as low as 0.23 mg/s. This work establishes a direct correlation between substrate pore architecture, molten-Si infiltration behavior, dense-layer evolution, and ablation resistance, providing a practical strategy for the design of lightweight porous HEC-based thermal-protection materials.
(TaNbTiZrHf)C / SiC-rich gradient layer / Reactive melt infiltration / Ablation resistance
| [1] |
|
| [2] |
|
| [3] |
|
| [4] |
|
| [5] |
|
| [6] |
Shen T, Li C, Ouyang H, Wang J, Bao L, Wu S, |
| [7] |
|
| [8] |
|
| [9] |
|
| [10] |
|
| [11] |
|
| [12] |
|
| [13] |
|
| [14] |
Wang Y, Csanadi T, Zhang H, Dusza J, Reece M, |
| [15] |
|
| [16] |
He H, Yang J, Guo W, Zhang S, |
| [17] |
|
| [18] |
Shen T, Li C, Ouyang H, He M, Wu S, Liu J, |
| [19] |
|
| [20] |
|
| [21] |
|
| [22] |
Ni N, Ding Q, Shi Y, Jiang J, Li L, Zhang R, |
| [23] |
|
| [24] |
|
| [25] |
|
| [26] |
|
| [27] |
|
| [28] |
|
| [29] |
|
| [30] |
|
| [31] |
|
| [32] |
|
| [33] |
|
| [34] |
|
| [35] |
|
| [36] |
|
| [37] |
|
| [38] |
Lu K, Liu J, Wei X, Bao W, Wu Y, Li F, |
| [39] |
|
| [40] |
|
| [41] |
|
/
| 〈 |
|
〉 |