Ultra-shallow Si p+n junctions formed by plasma doping are characterized by electrochemical capacitance-voltage (ECV). By comparing ECV results with those of secondary ion mass spectroscopy (SIMS), it is found that the dopant concentration profiles in heavily-doped p+ layer as well as junction depths measured by ECV are in good agreement with those measured by SIMS. However, the ECV measurement of dopant concentration in the underlying lightly doped n-type substrate is significantly influenced by the upper heavily-doped layer. The ECV technique is also easy to control and reproduce. The ECV results of ultra-shallow junctions (USJ) formed by plasma doping followed by different annealing processes show that ECV is capable of reliably characterizing a Si USJ with junction depth as low as 10 nm, and dopant concentration up to 1021 cm-3. Also, its depth resolution can be as fine as 1 nm. Therefore, it shows great potential in application for characterizing USJ in the sub-65 nm technology node CMOS devices.
WU Huizhen, RU Guoping, JIANG Yulong, QU Xinping, LI Bingzong, ZHANG Yonggang, JIN Chengguo, MIZUNO Bunji
. Electrochemical capacitance-voltage characterization
of plasma-doped ultra-shallow junctions[J]. Frontiers of Electrical and Electronic Engineering, 2008
, 3(1)
: 116
-119
.
DOI: 10.1007/s11460-008-0016-4
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