The design and fabrication on gate type resonant tunneling transistor

Expand
  • 1.School of Electronic Information Engineering, Tianjin University; 2.13th Institute of CETC;

Published date: 05 Jun 2008

Abstract

In light of fabricating resonant tunneling diode (RTD), in this paper a GaAs-based resonant tunneling transistor with gate structure (GRTT) has been designed and fabricated successfully. A systematic depiction centers on the designs of material structure, device structure, photolithography mask, fabrication of device and the measurement and analysis of parameters. The fabricated GRTT has a maximum PVCR of 46 and a maximum transconductance of 8 mS. The work lays the foundation for further improvement on the performance and parameters of RTT.

Cite this article

GUO Weilian, LIANG Huilai, SONG Ruiliang, ZHANG Shilin, MAO Luhong, HU Liuchang, LI Jianheng, QI Haitao, GUO Weilian, FENG Zhen, TIAN Guoping, SHANG Yuehui, LIU Yongqiang, LI Yali, YUAN Mingwen, LI Xiaobai . The design and fabrication on gate type resonant tunneling transistor[J]. Frontiers of Electrical and Electronic Engineering, 2008 , 3(2) : 227 -233 . DOI: 10.1007/s11460-008-0029-z

References

1. Guo Weilian Liang Huilai Zhang Shilin et al.Resonant tunneling diodeMicronanoelectronic Technology 2002 39(5)1115
2. Peatman W C B Brown E R Rooks M J et al.Novel resonant tunneling transistor with high transconductanceat room temperatureIEEE Electron DeviceLetters 1994 15(7)236238. doi:10.1109/55.294081
3. Stock J Malindretos J Indlekofer K M et al.A vertical resonant tunneling transistor for applicationin digital logic circuitsIEEE Transactionson Electron Devices 2001 48(6)10281032. doi:10.1109/16.925221
4. Chen K J Maezawa K Yamamoto M Novel current-voltage characteristics in an InP-based resonanttunneling high electron mobility transistorApplied Physics Letters 1995 67(24)36083610. doi:10.1063/1.115333
5. Bonnefoi A R McGill T C Burnham R D Resonant tunneling transistors with controllable negativedifferential resistancesIEEE Electron DeviceLetters 1985 6(12)636638. doi:10.1109/EDL.1985.26258
6. Seabaugh A C Beam E A Taddiken A H et al.Co-integration of resonant tunneling and doubleheterojunction bipolar transistor on InPIEEE Electron Device Letters 1993 14(10)472474. doi:10.1109/55.244734
Outlines

/