In light of fabricating resonant tunneling diode (RTD), in this paper a GaAs-based resonant tunneling transistor with gate structure (GRTT) has been designed and fabricated successfully. A systematic depiction centers on the designs of material structure, device structure, photolithography mask, fabrication of device and the measurement and analysis of parameters. The fabricated GRTT has a maximum PVCR of 46 and a maximum transconductance of 8 mS. The work lays the foundation for further improvement on the performance and parameters of RTT.
GUO Weilian, LIANG Huilai, SONG Ruiliang, ZHANG Shilin, MAO Luhong, HU Liuchang, LI Jianheng, QI Haitao, GUO Weilian, FENG Zhen, TIAN Guoping, SHANG Yuehui, LIU Yongqiang, LI Yali, YUAN Mingwen, LI Xiaobai
. The design and fabrication on gate type resonant
tunneling transistor[J]. Frontiers of Electrical and Electronic Engineering, 2008
, 3(2)
: 227
-233
.
DOI: 10.1007/s11460-008-0029-z
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