Frontiers of Electrical and Electronic Engineering >

2007 , Vol. 2 >Issue 4: 449 - 453

DOI: https://doi.org/10.1007/s11460-007-0084-x

Piezoresistive properties of resonant tunneling diodes

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  • Key Laboratory of Instrumentation Science and Dynamic Measurement of the Ministry of Education, Key Laboratory of the Electronic Measurement Technology of the National Defense, North University of China, Taiyuan 030051, China

Published date: 05 Dec 2007

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Abstract

A measurement system was designed and established to test the piezoresistive properties of resonant tunneling diodes (RTDs). The current-voltage characteristic shifts of RTD at different stress states were detected. The experimental results demonstrate that the piezoresistive sensitivity of RTD is larger than 1×10-8 Pa-1. To accurately represent the piezoresistive properties of RTD, the current-voltage characteristic coherence of the same RTD was tested. According to the experimental results, the largest relative resistance shift of an RTD in the same measurement environment is less than 3%, of which 1% is caused by the testing apparatuses.

Cite this article

MAO Haiyang, XIONG Jijun, ZHANG Wendong, XUE Chenyang, SANG Shengbo, BAO Aida . Piezoresistive properties of resonant tunneling diodes[J]. Frontiers of Electrical and Electronic Engineering, 2007 , 2(4) : 449 -453 . DOI: 10.1007/s11460-007-0084-x

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