Piezoresistive properties of resonant tunneling diodes

Abstract

A measurement system was designed and established to test the piezoresistive properties of resonant tunneling diodes (RTDs). The current-voltage characteristic shifts of RTD at different stress states were detected. The experimental results demonstrate that the piezoresistive sensitivity of RTD is larger than 1×10^-8 Pa^-1. To accurately represent the piezoresistive properties of RTD, the current-voltage characteristic coherence of the same RTD was tested. According to the experimental results, the largest relative resistance shift of an RTD in the same measurement environment is less than 3%, of which 1% is caused by the testing apparatuses.

Keywords

RTD, piezoresistive property, coherence, sensitivity, Raman