Frontiers of Electrical and Electronic Engineering >

2009 , Vol. 4 >Issue 2: 234 - 238

DOI: https://doi.org/10.1007/s11460-009-0043-9

RESEARCH ARTICLE

Design, fabrication and characterization of dual-channel real space transfer transistor

  • Weilian GUO ,
  • Shilin ZHANG ,
  • Xin YU
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  • School of Electronic Information Engineering, Tianjin University, Tianjin 300072, China

Published date: 05 Jun 2009

Copyright

2014 Higher Education Press and Springer-Verlag Berlin Heidelberg
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Abstract

In this paper, using a δ-doping dual-channel structure and GaAs substrate, a real space transfer transistor (RSTT) is designed and fabricated successfully. It has the standard Λ-shaped negative resistance I-V characteristics as well as a level and smooth valley region that the conventional RSTT has. The negative resistance parameters can be varied by changing gate voltage (VGS). For example, the PVCR varies from 2.1 to 10.6 while VGS changes from 0.6 V to 1.0 V. The transconductance for IP (ΔIP/ΔVGS) is 0.3 mS. The parameters of VP, VV and threshold gate voltage (VT) for negative resistance characteristics arising are all smaller than the value reported in the literature. Therefore, this device is suitable for low dissipation power application.

Key words： real space transfer transistor (RSTT); high speed compound three terminal function device; three terminal negative resistance device; hot electron device; electron transfer device

Cite this article

Weilian GUO , Shilin ZHANG , Xin YU . Design, fabrication and characterization of dual-channel real space transfer transistor[J]. Frontiers of Electrical and Electronic Engineering, 2009 , 4(2) : 234 -238 . DOI: 10.1007/s11460-009-0043-9

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