Design, fabrication and characterization of dual-channel real space transfer transistor

Abstract

In this paper, using a δ-doping dual-channel structure and GaAs substrate, a real space transfer transistor (RSTT) is designed and fabricated successfully. It has the standard Λ-shaped negative resistance I-V characteristics as well as a level and smooth valley region that the conventional RSTT has. The negative resistance parameters can be varied by changing gate voltage (V_GS). For example, the PVCR varies from 2.1 to 10.6 while V_GS changes from 0.6 V to 1.0 V. The transconductance for I_P (\mathrm{\Delta }{I}_{\mathrm{P}}/\mathrm{\Delta }{V}_{\mathrm{G}\mathrm{S}}) is 0.3 mS. The parameters of V_P, V_V and threshold gate voltage (V_T) for negative resistance characteristics arising are all smaller than the value reported in the literature. Therefore, this device is suitable for low dissipation power application.

Keywords

real space transfer transistor (RSTT) / high speed compound three terminal function device / three terminal negative resistance device / hot electron device / electron transfer device

References

[1] Luryi S, Kastalsky A, Gossard A C, Hendel R H. Charge injection transistor based on real-space hot-electron transfer. IEEE Transactions on Electron Device, 1984, 31(6): 832–839

[2] Grinberg A A, Kastalsky A, Luryi S. Theory of hot-electron injection in CHINT/NERFET devices. IEEE Transactions on Electron Devices, 1987, 34(2): 409–419

[3] Wu C L, Hsu W C. Enhanced resonant tunneling real-space transfer in δ-doped GaAs/InGaAs gated dual-channel transistors grown by MOCVD. IEEE Transactions on Electron Devices, 1996, 43(2): 207–212

[4] Chen Y W, Hsu W C, Shieh H M, Chen Y J, Lin Y S, Li Y J, Wang T B. High breakdown characteristic δ-doped InGaP/InGaAs/AlGaAs tunneling real-space transfer HEMT. IEEE Transactions on Electron Devices, 2002, 49(2): 221–225

[5] Li G R, Zheng H Z, Li Y X, Guo C Y, Li C F, Zhang P H, Yang X P. Heterostructure charge injection transistor. Chinese Journal of Semiconductors, 1996, 17(3): 203–206 (in Chinese)

[6] Sze S M. Physics of Semiconductor Devices. USA: John Wiley & Sons, 1985, 613

[7] Wei H C, Wang Y H, Houng M P. N-shaped negative differential resistance in a transistor structure with a resistive gate. IEEE Transactions on Electron Devices, 1994, 41(8): 1327–1333

RIGHTS & PERMISSIONS

Higher Education Press and Springer-Verlag Berlin Heidelberg