Design, fabrication and characterization of dual-channel real space transfer transistor

Abstract

In this paper, using a δ-doping dual-channel structure and GaAs substrate, a real space transfer transistor (RSTT) is designed and fabricated successfully. It has the standard Λ-shaped negative resistance I-V characteristics as well as a level and smooth valley region that the conventional RSTT has. The negative resistance parameters can be varied by changing gate voltage (V_GS). For example, the PVCR varies from 2.1 to 10.6 while V_GS changes from 0.6 V to 1.0 V. The transconductance for I_P (\mathrm{\Delta }{I}_{\mathrm{P}}/\mathrm{\Delta }{V}_{\mathrm{G}\mathrm{S}}) is 0.3 mS. The parameters of V_P, V_V and threshold gate voltage (V_T) for negative resistance characteristics arising are all smaller than the value reported in the literature. Therefore, this device is suitable for low dissipation power application.

Keywords

real space transfer transistor (RSTT) / high speed compound three terminal function device / three terminal negative resistance device / hot electron device / electron transfer device

References

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2014 Higher Education Press and Springer-Verlag Berlin Heidelberg