Frontiers of Electrical and Electronic Engineering >

2009 , Vol. 4 >Issue 2: 227 - 233

DOI: https://doi.org/10.1007/s11460-009-0023-0

RESEARCH ARTICLE

Finite element analysis of temperature distribution of polycrystalline silicon thin film transistors under self-heating stress

  • Huaisheng WANG ,
  • Mingxiang WANG ,
  • Zhenyu YANG
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  • Department of Microelectronics, Soochow University, Suzhou 215021, China

Published date: 05 Jun 2009

Copyright

2014 Higher Education Press and Springer-Verlag Berlin Heidelberg
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Abstract

The temperature distribution of typical n-type polycrystalline silicon thin film transistors under self-heating (SH) stress is studied by finite element analysis. From both steady-state and transient thermal simulation, the influence of device power density, substrate material, and channel width on device temperature distribution is analyzed. This study is helpful to understand the mechanism of SH degradation, and to effectively alleviate the SH effect in device operation.

Key words： finite element analysis (FEA); temperature distribution; thin film transistors; self-heating; steady-state; transient state

Cite this article

Huaisheng WANG , Mingxiang WANG , Zhenyu YANG . Finite element analysis of temperature distribution of polycrystalline silicon thin film transistors under self-heating stress[J]. Frontiers of Electrical and Electronic Engineering, 2009 , 4(2) : 227 -233 . DOI: 10.1007/s11460-009-0023-0

Acknowledgements

This work was supported by the National Natural Science Foundation of China (Grant No. 60406001).

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