Finite element analysis of temperature distribution of polycrystalline silicon thin film transistors under self-heating stress

{{article.zuoZheEn}}

Front. Electr. Electron. Eng. ›› 2009, Vol. 4 ›› Issue (2) : 227-233. DOI: 10.1007/s11460-009-0023-0
RESEARCH ARTICLE

Finite element analysis of temperature distribution of polycrystalline silicon thin film transistors under self-heating stress

  • {{article.zuoZheEn}}
Author information +
History +

Highlights

{{article.highlightEn}}

Abstract

{{article.abstractEn}}

Author summary

{{article.authorSummayEn}}

Keywords

Cite this article

Download citation ▾
{{article.zuoZheEn_L}}. {{article.titleEn}}. Front Elect Electr Eng Chin, 2009, 4(2): 227‒233 https://doi.org/10.1007/s11460-009-0023-0

References

References

{{article.reference}}

RIGHTS & PERMISSIONS

{{article.copyright.year}} {{article.copyright.holder}}

Accesses

Citations

Detail

Sections
Recommended

/