RESEARCH ARTICLE

Simplified parasitic capacitance extraction of shield in HVDC converter system with boundary element method

  • Shili LIU ,
  • Zezhong WANG ,
  • Jing SUN
Expand
  • Beijing Key Laboratory of High Voltage & EMC, North China Electric Power University, Beijing 102206, China

Received date: 03 Mar 2010

Accepted date: 19 Apr 2010

Published date: 05 Dec 2010

Copyright

2014 Higher Education Press and Springer-Verlag Berlin Heidelberg

Abstract

It is critical to build a wide-band circuit model to conduct research on the characteristics of the electromagnetic disturbance source during the localization of high voltage direct current (HVDC) technology. Parasitic capacitance is most essential for modeling the equivalent circuit, so a fast and accurate computation of capacitance parameters plays a vital role. Because of the large size and complex structure of the converter equipment, it is impossible to obtain capacitance parameters by means of measurement or simulating calculation with finite element software. In this paper, a simplified method of capacitance extraction based on boundary element method is proposed, which can provide an efficient means of establishing simulation models. In the method presented, simulation model of the shield may not be chamfered. Consequently, the edge and corner of the shield do not need to be handled with a sphere, cylinder and other curved surface model. The availability of this method is demonstrated by comparing the capacitance parameters of chamfered shield with that of non-chamfered shield.

Cite this article

Shili LIU , Zezhong WANG , Jing SUN . Simplified parasitic capacitance extraction of shield in HVDC converter system with boundary element method[J]. Frontiers of Electrical and Electronic Engineering, 2010 , 5(4) : 505 -509 . DOI: 10.1007/s11460-010-0097-8

1
Sun H F, Liu L, Cui X, Qi L, Wang Q, Li X L. Wide-band modeling of converter systems in HVDC converter stations. Proceedings of the Chinese Society for Electrical Engineering, 2009, 29(12): 24–29 (in Chinese)

2
Costache G I. Finite element method applied to skin-effect problems in strip transmission lines. IEEE Transactions on Microwave Theory and Techniques, 1987, 35(11): 1009–1013

DOI

3
Chou T Y, Cendes Z J. Capacitance calculation of IC packages using the finite element method and planes of symmetry. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1994, 13(9): 1159–1166

DOI

4
Yu W J, Wang Z Y, Gu J C. Fast capacitance extraction of actual 3-D VLSI interconnects using quasi-multiple medium accelerated BEM. IEEE Transactions on Microwave Theory and Techniques, 2003, 51(1): 109–119

DOI

5
Nabors K, White J. FastCap: a multipole accelerated 3-D capacitance extraction program. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1991, 10(11): 1447–1459

DOI

6
Yu W J, Wang Z Y. Research progress on 3-D VLSI parasitic capacitance extraction. Journal of Computer-Aided Design & Computer Graphics, 2003, 15(1): 21–28 (in Chinese)

7
Zemanian A H, Tewarson R P, Ju C P, Jen J F. Three-dimensional capacitance computations for VLSI/ULSI interconnections. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1989, 8(12): 1319–1326

DOI

8
Veremey V V, Mittra R. Domain decomposition approach for capacitance computation of nonorthogonal interconnect structures. IEEE Transactions on Microwave Theory and Techniques, 2000, 48(9): 1428–1434

9
Liu J L, Wang Z Z. Integral precision of the BEM of 3-D electric field. High Voltage Engineering, 2005, 31(9): 21–24 (in Chinese)

10
Li Y S, Wang Z Z. Curve element BEM in 3-D electrostatic fields based on ring coordinate systems. Transactions of China Electrotechnical Society, 2006, 21(9): 122–126 (in Chinese)

11
Wang Z Z, Li Y S, Deng C H. Curve quadrangular BEM in 3-D electrostatic fields based on spherical systems. Transactions of China Electrotechnical Society, 2007, 22(4): 32–36 (in Chinese)

12
Li Y S, Wang Z Z. Curve quadrangular BEMs in 3-D electrostatic fields based on cylinder coordinate transforms. High Voltage Engineering, 2007, 33(1): 132–135 (in Chinese)

13
Li Y S, Wang Z Z, Li X S, Wang B. Spherical surface triangular BEM of spherical electrode in 3-D electrostatic fields. Transactions of China Electrotechnical Society, 2009, 24(3): 8–13 (in Chinese)

14
Wang S S, Cui Y S, Xie S J. Extraction of parasitic capacitance for toroidal Ferrite core inductor. Transactions of China Electrotechnical Society, 2009, 24(4): 22–29 (in Chinese)

Outlines

/