Preparation of bismuth telluride thin film by electrochemical atomic layer epitaxy (ECALE)

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Front. Chem. China ›› 2007, Vol. 2 ›› Issue (1) : 102-106. DOI: 10.1007/s11458-007-0021-9

Preparation of bismuth telluride thin film by electrochemical atomic layer epitaxy (ECALE)

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{{article.zuoZheEn_L}}. {{article.titleEn}}. Front. Chem. China, 2007, 2(1): 102‒106 https://doi.org/10.1007/s11458-007-0021-9

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