Corundum (In xGa 1- x) 2O 3 alloys: First-principles study, epitaxial growth and thermal annealing

Do Dang Minh , Nguyen Le Manh An , Kyoung-Ho Kim , Si-Young Bae , Minh-Tan Ha

ChemPhysMater ›› 2026, Vol. 5 ›› Issue (2) : 232 -242.

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ChemPhysMater ›› 2026, Vol. 5 ›› Issue (2) :232 -242. DOI: 10.1016/j.chphma.2025.11.001
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Corundum (In xGa 1- x) 2O 3 alloys: First-principles study, epitaxial growth and thermal annealing
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Abstract

Corundum-type 𝛼-(InxGa1-x)2O3 offers a promising platform for deep-ultraviolet optoelectronics and power devices due to their tunable wide bandgap and compatibility with common oxide substrates. This work presents a comprehensive study combining first-principles calculations and mist chemical vapor deposition (mist-CVD) to investigate the structural stability, electronic properties, and epitaxial growth of these alloys. Density functional theory (DFT) and cluster expansion analysis reveal a wide miscibility gap and positive formation enthalpies, indicating a strong tendency for phase separation under equilibrium conditions. However, a metastable composition window was identified for In content up to x ≈0.21 at a typical growth temperature of 773 K. Theoretical calculations predict a bandgap reduction from 5.22 to 4.46 eV with increasing In content within this metastable range. In good agreement with these predictions, thin films grown on c-plane sapphire via mist-CVD exhibit systematic XRD peak shifts and a corresponding optical bandgap narrowing from 5.16 to 4.40 eV. Furthermore, post-deposition annealing above 700 °C was found to induce phase separation in films with higher In content, confirming the predicted thermodynamic instability. These results provide key insights into the metastable phase formation and bandgap engineering of 𝛼-(InxGa1-x)2O3, highlighting its potential for high-performance UV photodetectors and power electronics.

Keywords

(In xGa 1- x) 2O 3 alloys / First-principles calculations / Mist-CVD / Miscibility gap / Bandgap engineering

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Do Dang Minh, Nguyen Le Manh An, Kyoung-Ho Kim, Si-Young Bae, Minh-Tan Ha. Corundum (In xGa 1- x) 2O 3 alloys: First-principles study, epitaxial growth and thermal annealing. ChemPhysMater, 2026, 5 (2) : 232-242 DOI:10.1016/j.chphma.2025.11.001

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Declaration of Competing Interest

The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.

CRediT authorship contribution statement

Do Dang Minh: Writing – original draft, Methodology, Conceptualization. Nguyen Le Manh An: Methodology, Data curation. Kyoung-Ho Kim: Methodology. Si-Young Bae: Writing – review & editing, Investigation, Funding acquisition, Conceptualization. Minh-Tan Ha: Writing – review & editing, Supervision, Investigation, Funding acquisition, Conceptualization.

Acknowledgements

This research was funded by the Ministry of Education and Training (MOET) of Vietnam under grant number B2024-BKA-22 and the National Research Foundation of Korea (NRF) and the Commercialization Promotion Agency for R&D Outcomes (COMPA) grant funded by the Korea Government (Ministry of Science and ICT) (RS-2025-02222547).

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