Composition-dependent opto electronic characteristics of rhenium chalcogenide ReS2-xSex (x = 0, 1, 2) single crystals

Abstract

In recent years, Rhenium-based chalcogenides have gained traction as promising materials for optoelectronic applications. The photoresponse of the as-grown rhenium chalcogenide ReS_2-xSe_x (x = 0, 1, 2) single crystals was investigated under varying incident wavelengths and bias conditions of 0 and + 3 V. X-ray photoelectron spectroscopy, scanning electron microscopy, and transmission electron microscopy were performed to assess the crystal structure and surface quality for photodetection applications. The photodetection properties indicate favorable potential for switching applications within the photocurrent range of 10^-9 A. Notably, the photoresponse of ReS_2-xSe_x (x = 0, 1, 2) exhibited significant enhancement, achieving responsivity of 4.78 × 10^-3 A/W, detectivity of 9.16 × 10⁹ Jones, and response time of < 0.2 s. These values demonstrate the potential of these single crystals for advanced optoelectronic applications.

Keywords

Rhenium chalcogenides / Single crystals / Characterizations / Photodetector

Declaration of Competing Interest

The authors declare that they have no known competing financial interests or personal relationships that could have appeared to influence the work reported in this paper.

CRediT authorship contribution statement

Atriy B. Ghetiya: Writing – review & editing, Writing – original draft, Software, Investigation, Formal analysis, Conceptualization. Sunil H. Chaki: Supervision, Resources, Conceptualization. Jiten P. Tailor: Writing – review & editing. Ankurkumar J. Khimani: Data curation. Sandip V. Bhatt: Formal analysis. M.P. Deshpande: Resources.

References

[1] M.W. Iqbal, E. Elahi, A. Amin, G. Hussain, S. Aftab, Chemical doping of transition metal dichalcogenides (TMDCs) based field effect transistors: A review, Superlattices Microstruct. 137 (2020) 106350, doi: 10.1016/j.spmi.2019.106350.

[2] X. Zhang, S.Y. Teng, A.C.M. Loy, B.S. How, W.D. Leong, X. Tao, Transition metal dichalcogenides for the application of pollution reduction: A review, Nanomaterials 10 (2020) 1012, doi: 10.3390/nano10061012.

[3] K. Kalantar-zadeh, J.Z. Ou, T. Daeneke, M.S. Strano, M. Pumera, S.L. Gras, Two-dimensional transition metal dichalcogenides in biosystems, Adv. Funct. Mater. 25 (2015) 5086-5099, doi: 10.1002/adfm.201500891.

[4] A. Ghetiya, S.H. Chaki, A.J. Khimani, A.B. Hirpara, R.M. Kannaujiya, S. Patel, M.P. Deshpande, Growth and characterizations of rhenium disulfide (ReS₂) single crystals , Phys. Status Solidi Appl. Mater. Sci. 218 (2021) 1-8, doi: 10.1002/pssa.202000687.

[5] S. Susarla, A. Kutana, J.A. Hachtel, V. Kochat, A. Apte, R. Vajtai, J.C. Idrobo, B.I. Yakobson, C.S. Tiwary, P.M. Ajayan, Quaternary 2D transition metal dichalcogenides (TMDs) with tunable bandgap, Adv. Mater. 29 (2017) 1-8, doi: 10.1002/adma.201702457.

[6] W. Choi, N. Choudhary, G.H. Han, J. Park, D. Akinwande, Y.H. Lee, Recent development of two-dimensional transition metal dichalcogenides and their applications, Mater. Today 20 (2017) 116-130, doi: 10.1016/j.mattod.2016.10.002.

[7] D. Lembke, S. Bertolazzi, A. Kis, Single-layer MoS₂ electronics , Acc. Chem. Res. 48 (2015) 100-110, doi: 10.1021/ar500274q.

[8] A. Eftekhari, Molybdenum diselenide (MoSe₂) for energy storage, catalysis, and optoelectronics , Appl. Mater. Today 8 (2017) 1-17, doi: 10.1016/j.apmt.2017.01.006.

[9] H. Zhou, C. Wang, J.C. Shaw, R. Cheng, Y. Chen, X. Huang, Y. Liu, N.O. Weiss, Z. Lin, Y. Huang, X. Duan, Large area growth and electrical properties of p-type WSe₂ atomic layers , Nano Lett. 15 (2015) 709-713, doi: 10.1021/nl504256y.

[10] X. He, H. Li, Z. Zhu, Z. Dai, Y. Yang, P. Yang, Q. Zhang, P. Li, U. Schwingenschlogl, X. Zhang, Strain engineering in monolayer WS₂, MoS₂, and the WS₂/MoS₂ heterostructure , Appl. Phys. Lett. 109 (2016) 173105, doi: 10.1063/1.4966218.

[11] Z. Hemmat, J. Cavin, A. Ahmadiparidari, A. Ruckel, S. Rastegar, S.N. Misal, L. Majidi, K. Kumar, S. Wang, J. Guo, Quasi-binary transition metal dichalcogenide alloys: thermodynamic stability prediction, scalable synthesis, and application, Adv. Mater. 32 (2020) 1907041.

[12] M. Ye, D. Zhang, Y.K. Yap, Recent advances in electronic and optoelectronic devices based on two-dimensional transition metal dichalcogenides, Electron 6 (2017) 43, doi: 10.3390/electronics6020043.

[13] D. Vikraman, S. Hussain, K. Akbar, L. Truong, A. Kathalingam, S.H. Chun, J. Jung, H.J. Park, H.S. Kim, Improved hydrogen evolution reaction performance using MoS₂-WS₂ heterostructures by physicochemical process , ACS Sustain. Chem. Eng. 6 (2018) 8400-8409, doi: 10.1021/acssuschemeng.8b00524.

[14] Y. Chen, Y. Zhao, P. Ou, J. Song, Basal plane activation of two-dimensional transition metal dichalcogenides via alloying for the hydrogen evolution reaction: First-principles calculations and machine learning prediction, J. Mater. Chem. A 11 (2023) 9964-9975, doi: 10.1039/D3TA01361H.

[15] B. Jariwala, D. Voiry, A. Jindal, B.A. Chalke, R. Bapat, A. Thamizhavel, M. Chhowalla, M. Deshmukh, A. Bhattacharya, Synthesis and characterization of ReS₂ and ReSe₂ layered chalcogenide single crystals , Chem. Mater. 28 (2016) 3352-3359, doi: 10.1021/acs.chemmater.6b00364.

[16] D. Nayak, R. Thangavel, Comparative study of the electronic and photocatalytic properties of bulk and monolayer MX₂: A TB-mBJ study , Mater. Sci. Eng. B 264 (2021) 114944, doi: 10.1016/j.mseb.2020.114944.

[17] S. Mukherjee, A. Banwait, S. Grixti, N. Koratkar, C.V. Singh, Adsorption and diffusion of lithium and sodium on defective rhenium disulfide: A first principles study, ACS Appl. Mater. Interfaces 10 (2018) 5373-5384, doi: 10.1021/acsami.7b13604.

[18] N. Krishnan K, S. Sagar, A. Mukherjee, B.C. Das, Large-area growth of two-dimensional rhenium disulfide depicting robust artificial photoreceptor-cum-optic nerve synaptic functionality, ACS Appl. Opt. Mater. 1 (2023) 759-770, doi: 10.1021/acsaom.2c00192.

[19] C.C. Shih, M.H. Huang, C.K. Wan, W. Bin Jian, K. Kono, Y.F. Lin, C.H. Ho, Tuning interface barrier in 2D BP/ReSe₂ heterojunctions in control of optoelectronic performances and energy conversion efficiencies , ACS Photonics 7 (2020) 2886-2895, doi: 10.1021/acsphotonics.0c01200.

[20] P. Pazhamalai, K. Krishnamoorthy, V.K. Mariappan, A. Sathyaseelan, S.J. Kim, Solar driven renewable energy storage using rhenium disulfide nanostructure based rechargeable supercapacitors, Mater. Chem. Front. 4 (2020) 3290-3301, doi: 10.1039/d0qm00421a.

[21] S. Manoj, H.K. Sadhanala, I. Perelshtein, A. Gedanken, Rhenium sulfide incorporated in molybdenum sulfide nanosheets for high-performance symmetric supercapacitors with enhanced capacitance, ACS Appl. Mater. Interfaces 14 (2022) 18570-18577, doi: 10.1021/acsami.2c02457.

[22] J. Luxa, P. Marvan, P. Lazar, Z. Sofer, Chalcogenide vacancies drive the electrocatalytic performance of rhenium dichalcogenides, Nanoscale 11 (2019) 14684-14690, doi: 10.1039/c9nr03281a.

[23] A. Zulkefli, B. Mukherjee, T. Iwasaki, R. Hayakawa, S. Nakaharai, Y. Wakayama, Gate-bias tunable humidity sensors based on rhenium disulfide field-effect transistors, Jpn. J. Appl. Phys. 60 (2021) SBBH01, doi: 10.35848/1347-4065/abd2a0.

[24] X. Li, C. Chen, Y. Yang, Z. Lei, H. Xu, 2D Re-based transition metal chalcogenides: Progress, challenges, and opportunities, Adv. Sci. 7 (2020) 1-34, doi: 10.1002/advs.202002320.

[25] H.X. Zhong, S. Gao, J.J. Shi, L. Yang, Quasiparticle band gaps, excitonic effects, and anisotropic optical properties of the monolayer distorted 1T diamond-chain structures ReS₂ and ReSe₂ , Phys. Rev. B - Condens. Matter Mater. Phys. 92 (2015) 1-7, doi: 10.1103/PhysRevB.92.115438.

[26] A. Ghetiya, S.H. Chaki, J.P. Tailor, M.P. Deshpande, Growth, characterizations, and thermal analysis of rhenium chalcogenides ReS_2-xSe_x (x = 0, 1, and 2) single crystals , J. Mater. Sci. Mater. Electron. 34 (2023) 1-10, doi: 10.1007/s10854-022-09554-2.

[27] S. Kim, H.K. Yu, S. Yoon, N.S. Lee, M.H. Kim, Growth of two-dimensional rhenium disulfide (ReS₂) nanosheets with a few layers at low temperature , CrystEngComm 19 (2017) 5341-5345, doi: 10.1039/c7ce00926g.

[28] Z. Lai, A. Chaturvedi, Y. Wang, T.H. Tran, X. Liu, C. Tan, B. Chen, Y. Huang, G. Nam, Z. Zhang, Y. Chen, Z. Hu, S. Xi, Q. Zhang, Y. Zong, L. Gu, C. Kloc, Y. Du, H. Zhang, Preparation of 1T’-phase ReS_2xSe_2(1-x) (x = 0-1) nanodots for highly efficient electrocatalytic hydrogen evolution reaction , J. Am. Chem. Soc. 2 (2018) 8563-8568, doi: 10.1021/jacs.8b04513.

[29] C. Li, Y. Leng, J. Huo, Diode-pumped solid-state Q-switched laser with rhenium diselenide as saturable absorber, Appl. Sci. 8 (2018) 1753, doi: 10.3390/app8101753.

[30] J.P. Tailor, D.S. Trivedi, S.H. Chaki, M.D. Chaudhary, M.P. Deshpande, Study of chemical vapour transport (CVT) grown WSe_1.93 single crystals , Mater. Sci. Semicond. Process. 61 (2017) 11-16, doi: 10.1016/j.mssp.2016.12.032.

[31] R.M. Kannaujiya, S.H. Chaki, A.J. Khimani, Z.R. Parekh, A.B. Hirpara, S.S. Soni, S.N. Bariya, M.P. Deshpande, Unveiling the optoelectronic characteristics of SnTe thin films: an extensive investigation via structural & photoresponse analysis of drop-cast deposition, Surfaces Interfaces 45 (2024) 103788, doi: 10.1016/j.surfin.2023.103788.

[32] C. Fang, H. Wang, Z. Shen, H. Shen, J. Ma, J. Wang, H. Luo, D. Li, Functional nanostructured materials (including low-D carbon) high-performance photodetectors based on lead free 2D ruddlesden-popper perovskite/MoS₂ structure , ACS Appl. Mater. Interfaces 11 (2019) 8419-8427, doi: 10.1021/acsami.8b20538.

[33] A.J. Khimani, S.H. Chaki, M.P. Deshpande, S.M. Chauhan, J.P. Tailor, Alloy engineering to promote photodetection in In_xSn_1-xS₂ and Sb_xSn_1-xS₂ ternary alloys , Mater. Lett. 236 (2019) 187-189, doi: 10.1016/j.matlet.2018.10.102.

[34] Y. Xie, B. Zhang, S. Wang, D. Wang, A. Wang, Z. Wang, H. Yu, H. Zhang, Y. Chen, M. Zhao, B. Huang, L. Mei, J. Wang, Ultrabroadband MoS₂ photodetector with spectral response from 445 to 2717 nm , Adv. Mater. 29 (2017) 1605972, doi: 10.1002/adma.201605972.

[35] N. Perea-López, A.L. Elías, A. Berkdemir, A. Castro-Beltran, H.R. Gutiérrez, S. Feng, R. Lv, T. Hayashi, F. López-Urías, S. Ghosh, B. Muchharla, S. Talapatra, H. Terrones, M. Terrones, Photosensor device based on few-layered WS₂ films , Adv. Funct. Mater. 23 (2013) 5511-5517, doi: 10.1002/adfm.201300760.

[36] K. Hou, Z. Huang, S. Liu, G. Liao, H. Qiao, H. Li, X. Qi, A hydrothermally synthesized MoS_2(1-x)Se_2x alloy with deep-shallow level conversion for enhanced performance of photodetectors , Nanoscale Adv. 2 (2020) 2185-2191, doi: 10.1039/d0na00202j.