Anisotropic etching of 2D layered materials

Yuge Zhang , Qian Liu , Deliang Zhang , Yue Hong , Qiang Li

ChemPhysMater ›› 2024, Vol. 3 ›› Issue (4) : 341 -356.

PDF (7372KB)
ChemPhysMater ›› 2024, Vol. 3 ›› Issue (4) :341 -356. DOI: 10.1016/j.chphma.2024.07.001
Review article
research-article
Anisotropic etching of 2D layered materials
Author information +
History +
PDF (7372KB)

Abstract

Two-dimensional (2D) layered materials with unique physicochemical properties, such as graphene, transition metal dichalcogenides, and hexagonal boron nitride, have shown considerable potential in the electrical and electronics industries as well as society. To realize the practical applications of 2D materials, the size, shape, and edge structures must be refined. Etching is a critical processing step in the semiconducting industry and its potential as an efficient approach for fabricating diverse nanostructures of 2D materials has been demonstrated, broadening their applications in the field of nanoelectronics. In this paper, we present an overview of recent advances in anisotropic etching of various 2D materials. Anisotropic etching and the associated mechanisms are discussed in context of the synthesis, processing, and characterization of 2D materials. An overview of the applications of anisotropic etched 2D materials is provided. Finally, the challenges and future opportunities for anisotropic etching of 2D materials are discussed.

Keywords

2D materials / Anisotropic etching / Nanostructures / Graphene / MoS2

Cite this article

Download citation ▾
Yuge Zhang, Qian Liu, Deliang Zhang, Yue Hong, Qiang Li. Anisotropic etching of 2D layered materials. ChemPhysMater, 2024, 3 (4) : 341-356 DOI:10.1016/j.chphma.2024.07.001

登录浏览全文

4963

注册一个新账户 忘记密码

Declaration of Competing Interest

Yue Hong is an editor for ChemPhysMater and was not involved in the editorial review or the decision to publish this article. All authors declare that there are no competing interests.

CRediT authorship contribution statement

Yuge Zhang: Writing - original draft, Investigation, Formal analysis. Qian Liu: Writing - original draft, Investigation, Formal analysis. Deliang Zhang: Writing - review & editing, Formal analysis. Yue Hong: Writing - review & editing, Formal analysis. Qiang Li: Writing - review & editing, Supervision, Funding acquisition, Conceptualization.

Acknowledgements

This work was financially supported by the Natural Science Foundation of Shandong Province (No. ZR2023MB028), the Grant for Taishan Scholar Advantage Characteristic Discipline of Shandong Province, the Start-up Grant for QiLu Young Scholars of Shandong University.

References

[1]

K.S. Novoselov, A.K. Geim, S.V. Morozov, D. Jiang, Y. Zhang, S.V. Dubonos, I.V. Grigorieva, A.A. Firsov, Electric field effect in atomically thin carbon films, Science 306 (2004) 666-669, doi: 10.1126/science.1102896.

[2]

A.K. Geim, K.S. Novoselov, The rise of graphene, Nat. Mater. 6 (2007) 183-191, doi: 10.1038/nmat1849.

[3]

Q.H. Wang, K. Kalantar-Zadeh, A. Kis, J.N. Coleman, M.S. Strano, Electronics and optoelectronics of two-dimensional transition metal dichalcogenides, Nat. Nanotechnol. 7 (2012) 699-712, doi: 10.1038/nnano.2012.193.

[4]

M. Chhowalla, H.S. Shin, G. Eda, L.J. Li, K.P. Loh, H. Zhang, The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets, Nat. Chem. 5 (2013) 263-275, doi: 10.1038/nchem.1589.

[5]

W. Yang, G. Chen, Z. Shi, C.C. Liu, L. Zhang, G. Xie, M. Cheng, D. Wang, R. Yang, D. Shi, K. Watanabe, T. Taniguchi, Y. Yao, Y. Zhang, G. Zhang, Epitaxial growth of single-domain graphene on hexagonal boron nitride, Nat. Mater. 12 (2013) 792-797, doi: 10.1038/nmat3695.

[6]

K.S. Novoselov, D. Jiang, F. Schedin, T.J. Booth, V.V. Khotkevich, S.V. Morozov, A.K. Geim, Two-dimensional atomic crystals, Proc. Nat. Acad. Sci. U.S. A 102 (2005) 10451-10453, doi: 10.1073/pnas.0502848102.

[7]

A.H. Castro Neto, F. Guinea, N.M.R. Peres, K.S. Novoselov, A.K. Geim, The electronic properties of graphene, Rev. Mod. Phys. 81 (2009) 109-162, doi: 10.1103/RevModPhys.81.109.

[8]

M. Fujita, K. Wakabayashi, K. Nakada, K. Kusakabe, Peculiar localized state at zigzag graphite edge, J. Phys. Soc. Jpn. 65 (1996) 1920-1923, doi: 10.1143/JPSJ.65.1920.

[9]

K. Nakada, M. Fujita, G. Dresselhaus, M.S. Dresselhaus, Edge state in graphene ribbons: nanometer size effect and edge shape dependence, Phys. Rev. B 54 (1996) 17954-17961, doi: 10.1103/PhysRevB.54.17954.

[10]

S. Helveg, J.V. Lauritsen, E. Lægsgaard, I. Stensgaard, J.K. Nørskov, B.S. Clausen, H. Topsøe, F. Besenbacher, Atomic-scale structure of single-layer MoS2 nanoclusters, Phys. Rev. Lett. 84 (2000) 951-954, doi: 10.1103/PhysRevLett.84.951.

[11]

Y. Kobayashi, K.I. Fukui, T. Enoki, K. Kusakabe, Y. Kaburagi, Observation of zigzag and armchair edges of graphite using scanning tunneling microscopy and spectroscopy, Phys. Rev. B 71 (2005), doi: 10.1103/PhysRevB.71.193406.

[12]

Y.-W. Son, M.L. Cohen, S.G. Louie, Half-metallic graphene nanoribbons, Nature 444 (2006) 347-349, doi: 10.1038/nature05180.

[13]

Y.W. Son, M.L. Cohen, S.G. Louie, Energy gaps in graphene nanoribbons, Phys. Rev. Lett. 97 (2006) 216803, doi: 10.1103/PhysRevLett.97.216803.

[14]

J. Fernández-Rossier, J.J. Palacios, Magnetism in graphene nanoislands, Phys. Rev. Lett. 99 (2007) 177204, doi: 10.1103/PhysRevLett.99.177204.

[15]

T.F. Jaramillo, K.P. Jørgensen, J. Bonde, J.H. Nielsen, S. Horch, I. Chorkendorff, Identification of active edge sites for electrochemical H2 evolution from MoS2 nanocatalysts, Science 317 (2007) 100-102, doi: 10.1126/science.1141483.

[16]

Y.L. Li, Z. Zhou, S. Zhang, Z. Chen, MoS2 nanoribbons: High stability and unusual electronic andrnmagnetic properties, J. Am. Chem. Soc. 130 (2008) 16739-16744, doi: 10.1021/ja805545x.

[17]

W.L. Wang, S. Meng, E. Kaxiras, Graphene nanoflakes with large spin, Nano Lett. 8 (2008) 241-245, doi: 10.1021/nl072548a.

[18]

M. Kan, J. Zhou, Q. Wang, Q. Sun, P. Jena, Tuning the band gap and magnetic properties of BN sheets impregnated with graphene flakes, Phys. Rev. B 84 (2011) 205412, doi: 10.1103/PhysRevB.84.205412.

[19]

C. Tao, L. Jiao, O.V. Yazyev, Y.C. Chen, J. Feng, X. Zhang, R.B. Capaz, J.M. Tour, A. Zettl, S.G. Louie, H. Dai, M.F. Crommie, Spatially resolving edge states of chiral graphene nanoribbons, Nat. Phys. 7 (2011) 616-620, doi: 10.1038/nphys1991.

[20]

H.I. Karunadasa, E. Montalvo, Y. Sun, M. Majda, J.R. Long, C.J. Chang, A molecular MoS2 edge site mimic for catalytic hydrogen generation, Science 335 (2012) 698-702, doi: 10.1126/science.1215868.

[21]

M. Pan, E.C. Girão, X. Jia, S. Bhaviripudi, Q. Li, J. Kong, V. Meunier, M.S. Dresselhaus, Topographic and spectroscopic characterization of electronic edge states in CVD grown graphene nanoribbons, Nano Lett. 12 (2012) 1928-1933, doi: 10.1021/nl204392s.

[22]

X. Zhang, O.V. Yazyev, J. Feng, L. Xie, C. Tao, Y.C. Chen, L. Jiao, Z. Pedramrazi, A. Zettl, S.G. Louie, H. Dai, M.F. Crommie, Experimentally engineering the edge termination of graphene nanoribbons, ACS Nano 7 (2013) 198-202, doi: 10.1021/nn303730v.

[23]

J.D. Benck, T.R. Hellstern, J. Kibsgaard, P. Chakthranont, T.F. Jaramillo, Catalyzing the hydrogen evolution reaction (HER) with molybdenum sulfide nanomaterials, ACS Catal. 4 (2014) 3957-3971, doi: 10.1021/cs500923c.

[24]

S. Wang, L. Talirz, C.A. Pignedoli, X. Feng, K. Müllen, R. Fasel, P. Ruffieux, Giant edge state splitting at atomically precise graphene zigzag edges, Nat. Commun. 7 (2016) 11507, doi: 10.1038/ncomms11507.

[25]

Y.R. An, X.L. Fan, Z.F. Luo, W.M. Lau, Nanopolygons of monolayer MS2: Best morphology and size for HER catalysis, Nano Lett. 17 (2017) 368-376, doi: 10.1021/acs.nanolett.6b04324.

[26]

J. Cai, P. Ruffieux, R. Jaafar, M. Bieri, T. Braun, S. Blankenburg, M. Muoth, A.P. Seitsonen, M. Saleh, X. Feng, K. Müllen, R. Fasel, Atomically precise bottom-up fabrication of graphene nanoribbons, Nature 466 (2010) 470-473, doi: 10.1038/nature09211.

[27]

A.W. Robertson, J.H. Warner, Hexagonal single crystal domains of few-layer graphene on copper foils, Nano Lett. 11 (2011) 1182-1189, doi: 10.1021/nl104142k.

[28]

Q. Yu, L.A. Jauregui, W. Wu, R. Colby, J. Tian, Z. Su, H. Cao, Z. Liu, D. Pandey, D. Wei, T.F. Chung, P. Peng, N.P. Guisinger, E.A. Stach, J. Bao, S.S. Pei, Y.P. Chen, Control and characterization of individual grains and grain boundaries in graphene grown by chemical vapour deposition, Nat. Mater. 10 (2011) 443-449, doi: 10.1038/nmat3010.

[29]

D. Wei, Y. Lu, C. Han, T. Niu, W. Chen, A.T.S. Wee, Critical crystal growth of graphene on dielectric substrates at low temperature for electronic devices, Angew. Chem. Int. Ed. 52 (2013) 14121-14126, doi: 10.1002/anie.201306086.

[30]

L. Ci, L. Song, D. Jariwala, A. Elías, W. Gao, M. Terrones, P. Ajayan, Graphene shape control by multistage cutting and transfer, Adv. Mater. 21 (2009) 4487-4491, doi: 10.1002/adma.200900942.

[31]

P. Solís-Fernández, K. Yoshida, Y. Ogawa, M. Tsuji, H. Ago, Dense arrays of highly aligned graphene nanoribbons produced by substrate-controlled metal-assisted etching of graphene, Adv. Mater. 25 (2013) 6562-6568, doi: 10.1002/adma.201302619.

[32]

Z. Shi, R. Yang, L. Zhang, Y. Wang, D. Liu, D. Shi, E. Wang, G. Zhang, Patterning graphene with zigzag edges by self-aligned anisotropic etching, Adv. Mater. 23 (2011) 3061-3065, doi: 10.1002/adma.201100633.

[33]

T. Ma, W. Ren, X. Zhang, Z. Liu, Y. Gao, L.C. Yin, X.L. Ma, F. Ding, H.M. Cheng, Edge-controlled growth and kinetics of single-crystal graphene domains by chemical vapor deposition, Proc. Nat. Acad. Sci. U.S.A 110 (2013) 20386-20391, doi: 10.1073/pnas.1312802110.

[34]

H. Sun, J. Dong, F. Liu, F. Ding, Etching of two-dimensional materials, Mater. Today 42 (2021) 192-213, doi: 10.1016/j.mattod.2020.09.031.

[35]

M. Li, L. Li, Y. Fan, F. Jiao, D. Geng, W. Hu, From top to down —Recent advances in etching of 2D materials, Adv. Mater. Interfaces 9 (2022) 2201334, doi: 10.1002/admi.202201334.

[36]

T. He, Z. Wang, F. Zhong, H. Fang, P. Wang, W. Hu, Etching techniques in 2D materials, Adv. Mater. Technol. 4 (2019) 1900064, doi: 10.1002/admt.201900064.

[37]

D. Geng, B. Wu, Y. Guo, B. Luo, Y. Xue, J. Chen, G. Yu, Y. Liu, Fractal etching of graphene, J. Am. Chem. Soc. 135 (2013) 6431-6434, doi: 10.1021/ja402224h.

[38]

B. Luo, E. Gao, D. Geng, H. Wang, Z. Xu, G. Yu, Etching-controlled growth of graphene by chemical vapor deposition, Chem. Mater. 29 (2017) 1022-1027, doi: 10.1021/acs.chemmater.6b03672.

[39]

Y.Y. Stehle, X. Sang, R.R. Unocic, D. Voylov, R.K. Jackson, S. Smirnov, I. Vlassiouk, Anisotropic etching of hexagonal boron nitride and graphene: Question of edge terminations, Nano Lett. 17 (2017) 7306-7314, doi: 10.1021/acs.nanolett.7b02841.

[40]

D. Geng, H. Wang, Y. Wan, Z. Xu, B. Luo, J. Xu, G. Yu, Direct top-down fabrication of large-area graphene arrays by an in situ etching method, Adv. Mater. 27 (2015) 4195-4199, doi: 10.1002/adma.201501524.

[41]

B. Liu, P. Gong, Y. Sun, K. Ba, S. Xie, Z. Sun, Precise lateral control of graphene via living zigzag edges, Carbon N Y 167 (2020) 718-723, doi: 10.1016/j.carbon.2020.06.049.

[42]

Z. Wang, Q. Li, H. Xu, C. Dahl-Petersen, Q. Yang, D. Cheng, D. Cao, F. Besenbacher, J.V. Lauritsen, S. Helveg, M. Dong, Controllable etching of MoS2 basal planes for enhanced hydrogen evolution through the formation of active edge sites, Nano Energy 49 (2018) 634-643, doi: 10.1016/j.nanoen.2018.04.067.

[43]

I. Vlassiouk, M. Regmi, P. Fulvio, S. Dai, P. Datskos, G. Eres, S. Smirnov, Role of hydrogen in chemical vapor deposition growth of large single-crystal graphene, ACS Nano 5 (2011) 6069-6076, doi: 10.1021/nn201978y.

[44]

J. Liu, Y. Xu, H. Cai, C. Zuo, Z. Huang, L. Lin, X. Guo, Z. Chen, F. Lai, Double hexagonal graphene ring synthesized using a growth-etching method, Nanoscale 8 (2016) 14178-14183, doi: 10.1039/C6NR02515C.

[45]

S.S. Datta, D.R. Strachan, S.M. Khamis, A.T.C. Johnson, Crystallographic etching of few-layer graphene, Nano Lett. 8 (2008) 1912-1915, doi: 10.1021/nl080583r.

[46]

L. Ci, Z. Xu, L. Wang, W. Gao, F. Ding, K.F. Kelly, B.I. Yakobson, P.M. Ajayan, Controlled nanocutting of graphene, Nano Res. 1 (2008) 116-122, doi: 10.1007/s12274-008-8020-9.

[47]

F. Schäffel, J.H. Warner, A. Bachmatiuk, B. Rellinghaus, B. Büchner, L. Schultz, M.H. Rümmeli, Shedding light on the crystallographic etching of multi-layer graphene at the atomic scale, Nano Res. 2 (2009) 695-705, doi: 10.1007/s12274-009-9073-0.

[48]

R. Wang, J. Wang, H. Gong, Z. Luo, D. Zhan, Z. Shen, J.T.L. Thong, Cobalt-mediated crystallographic etching of graphite from defects, Small 8 (2012) 2515-2523, doi: 10.1002/smll.201102747.

[49]

L.C. Campos, V.R. Manfrinato, J.D. Sanchez-Yamagishi, J. Kong, P. Jarillo-Herrero, Anisotropic etching and nanoribbon formation in single-layer graphene, Nano Lett. 9 (2009) 2600-2604, doi: 10.1021/nl900811r.

[50]

H. Ago, Y. Kayo, P. Solís-Fernández, K. Yoshida, M. Tsuji, Synthesis of high-density arrays of graphene nanoribbons by anisotropic metal-assisted etching, Carbon N Y 78 (2014) 339-346, doi: 10.1016/j.carbon.2014.07.010.

[51]

T. Tsukamoto, T. Ogino, Control of graphene etching by atomic structures of the supporting substrate surfaces, J. Phys. Chem. C 115 (2011) 8580-8585, doi: 10.1021/jp1094933.

[52]

J. Santiesteban, S. Fuentes, M.J. Yacaman, Catalysis of carbon methanation by small platinum particles, J. Vac. Sci. Technol. A 1 (1983) 1198-1200, doi: 10.1116/1.571897.

[53]

N. Severin, S. Kirstein, I.M. Sokolov, J.P. Rabe, Rapid trench channeling of graphenes with catalytic silver nanoparticles, Nano Lett. 9 (2009) 457-461, doi: 10.1021/nl8034509.

[54]

M. Lukas, V. Meded, A. Vijayaraghavan, L. Song, P.M. Ajayan, K. Fink, W. Wenzel, R. Krupke, Catalytic subsurface etching of nanoscale channels in graphite, Nat. Commun. 4 (2013) 1379, doi: 10.1038/ncomms2399.

[55]

L. Ma, J. Wang, J. Yip, F. Ding, J. Phys. Mechanism of transition-metal nanoparticle catalytic graphene cutting, Chem. Lett. 5 (2014) 1192-1197, doi: 10.1021/jz500254u.

[56]

Z. Qiu, L. Song, J. Zhao, Z. Li, J. Yang, The nanoparticle size effect in graphene cutting: a “Pac-Man ” mechanism, Angew. Chem. Int. Ed. 55 (2016) 9918-9921, doi: 10.1002/anie.201602541.

[57]

L. Ma, X.C. Zeng, Catalytic directional cutting of hexagonal boron nitride: The roles of interface and etching agents, Nano Lett. 17 (2017) 3208-3214, doi: 10.1021/acs.nanolett.7b00771.

[58]

C.W. Keep, S. Terry, M. Wells, Studies of the nickel-catalyzed hydrogenation of graphite, J. Catal. 66 (1980) 451-462, doi: 10.1016/0021-9517(80)90047-0.

[59]

P.J. Goethel, R.T. Yang, Mechanism of graphite hydrogenation catalyzed by nickel, J. Catal. 108 (1987) 356-363, doi: 10.1016/0021-9517(87)90184-9.

[60]

Y. Zhang, Z. Li, P. Kim, L. Zhang, C. Zhou, Anisotropic hydrogen etching of chemical vapor deposited graphene, ACS Nano 6 (2012) 126-132, doi: 10.1021/nn202996r.

[61]

W. Guo, B. Wu, Y. Li, L. Wang, J. Chen, B. Chen, Z. Zhang, L. Peng, S. Wang, Y. Liu, Governing rule for dynamic formation of grain boundaries in grown graphene, ACS Nano 9 (2015) 5792-5798, doi: 10.1021/acsnano.5b01827.

[62]

H. Zhang, Y. Zhang, Y. Zhang, Z. Chen, Y. Sui, X. Ge, G. Yu, Z. Jin, X. Liu, Edge morphology evolution of graphene domains during chemical vapor deposition cooling revealed through hydrogen etching, Nanoscale 8 (2016) 4145-4150, doi: 10.1039/C5NR06624G.

[63]

I. Artyukhov Vasilii, Y. Liu, I. Yakobson Boris, Equilibrium at the edge and atomistic mechanisms of graphene growth, Proc. Nat. Acad. Sci. 109 (2012) 15136-15140, doi: 10.1073/pnas.1207519109.

[64]

Y. Liu, A. Dobrinsky, B.I. Yakobson, Graphene edge from armchair to zigzag: The origins of nanotube chirality? Phys. Rev. Lett. 105 (2010) 235502, doi: 10.1103/PhysRevLett.105.235502.

[65]

I. Wlasny, P. Dabrowski, M. Rogala, P.J. Kowalczyk, I. Pasternak, W. Strupinski, J.M. Baranowski, Z. Klusek, Role of graphene defects in corrosion of graphene-coated Cu(111) surface, Appl. Phys. Lett. 102 (2013) 111601, doi: 10.1063/1.4795861.

[66]

Y. Zhang, H. Zhang, F. Li, H. Shu, Z. Chen, Y. Sui, Y. Zhang, X. Ge, G. Yu, Z. Jin, X. Liu, Invisible growth of microstructural defects in graphene chemical vapor deposition on copper foil, Carbon N Y 96 (2016) 237-242, doi: 10.1016/j.carbon.2015.09.041.

[67]

S. Chen, J. Gao, B.M. Srinivasan, G. Zhang, V. Sorkin, R. Hariharaputran, Y.W. Zhang, A kinetic Monte Carlo model for the growth and etching of graphene during chemical vapor deposition, Carbon N Y 146 (2019) 399-405, doi: 10.1016/j.carbon.2019.02.016.

[68]

P. Sutter, J. Lahiri, P. Albrecht, E. Sutter, Chemical vapor deposition and etching of high-quality monolayer hexagonal boron nitride films, ACS Nano 5 (2011) 7303-7309, doi: 10.1021/nn202141k.

[69]

S. Sharma, G. Kalita, R. Vishwakarma, Z. Zulkifli, M. Tanemura, Opening of triangular hole in triangular-shaped chemical vapor deposited hexagonal boron nitride crystal, Sci. Rep. 5 (2015) 10426-10426, doi: 10.1038/srep10426.

[70]

L. Wang, B. Wu, L. Jiang, J. Chen, Y. Li, W. Guo, P. Hu, Y. Liu, Growth and etching of monolayer hexagonal boron nitride, Adv. Mater. 27 (2015) 4858-4864, doi: 10.1002/adma.201501166.

[71]

L. Chen, L. He, H.S. Wang, H. Wang, S. Tang, C. Cong, H. Xie, L. Li, H. Xia, T. Li, T. Wu, D. Zhang, L. Deng, T. Yu, X. Xie, M. Jiang, Oriented graphene nanoribbons embedded in hexagonal boron nitride trenches, Nat. Commun. 8 (2017) 14703, doi: 10.1038/ncomms14703.

[72]

X. Li, J. Dong, J.C. Idrobo, A.A. Puretzky, C.M. Rouleau, D.B. Geohegan, F. Ding, K. Xiao, Edge-controlled growth and etching of two-dimensional GaSe monolayers, J. Am. Chem. Soc. 139 (2017) 482-491, doi: 10.1021/jacs.6b11076.

[73]

L. Cai, M.J. Shearer, Y. Zhao, Z. Hu, F. Wang, Y. Zhang, K.W. Eliceiri, R.J. Hamers, W. Yan, S. Wei, M. Tang, S. Jin, Chemically derived kirigami of WSe2, J. Am. Chem. Soc. 140 (2018) 10980-10987, doi: 10.1021/jacs.8b03399.

[74]

Z.-J. Wang, J. Dong, Y. Cui, G. Eres, O. Timpe, Q. Fu, F. Ding, R. Schloegl, M.G. Willinger, Stacking sequence and interlayer coupling in few-layer graphene revealed by in situ imaging, Nat. Commun. 7 (2016) 13256, doi: 10.1038/ncomms13256.

[75]

P.Y. Huang, C.S. Ruiz-Vargas, A.M. van der Zande, W.S. Whitney, M.P. Levendorf, J.W. Kevek, S. Garg, J.S. Alden, C.J. Hustedt, Y. Zhu, J. Park, P.L. McEuen, D.A. Muller, Grains and grain boundaries in single-layer graphene atomic patchwork quilts, Nature 469 (2011) 389-392, doi: 10.1038/nature09718.

[76]

W. Tsen Adam, L. Brown, P. Levendorf Mark, F. Ghahari, Y. Huang Pinshane, W. Havener Robin, S. Ruiz-Vargas Carlos, A. Muller David, P. Kim, J. Park, Tailoring electrical transport across grain boundaries in polycrystalline graphene, Science (1979) 336 (2012) 1143-1146, doi: 10.1126/science.1218948.

[77]

G.-H. Lee, C. Cooper Ryan, J. An Sung, S. Lee, A. van der Zande, N. Petrone, G. Hammerberg Alexandra, C. Lee, B. Crawford, W. Oliver, W. Kysar Jeffrey, J. Hone, High-strength chemical-vapor-deposited graphene and grain boundaries, Science 340 (2013) 1073-1076, doi: 10.1126/science.1235126.

[78]

J. Dong, D. Geng, F. Liu, F. Ding, Formation of twinned graphene polycrystals, Angew. Chem. Int. Ed. 58 (2019) 7723-7727, doi: 10.1002/anie.201902441.

[79]

F. Liu, J. Dong, N.Y. Kim, Z. Lee, F. Ding, Growth and selective etching of twinned graphene on liquid copper surface, Small. 17 (2021) 2103484, doi: 10.1002/smll.202103484.

[80]

X. Wang, H. Dai, Etching and narrowing of graphene from the edges, Nat. Chem. 2 (2010) 661, doi: 10.1038/nchem.719.

[81]

P. Nemes-Incze, G. Magda, K. Kamarás, L.P. Biró, Crystallographically selective nanopatterning of graphene on SiO2, Nano Res. 3 (2010) 110-116, doi: 10.1007/s12274-010-1015-3.

[82]

G. Dobrik, L. Tapasztó, L.P. Biró, Selective etching of armchair edges in graphite, Carbon N Y 56 (2013) 332-338, doi: 10.1016/j.carbon.2013.01.018.

[83]

H. Zhou, F. Yu, Y. Liu, X. Zou, C. Cong, C. Qiu, T. Yu, Z. Yan, X. Shen, L. Sun, B.I. Yakobson, J.M. Tour, Thickness-dependent patterning of MoS2 sheets with well-oriented triangular pits by heating in air, Nano Res. 6 (2013) 703-711, doi: 10.1007/s12274-013-0346-2.

[84]

M. Yamamoto, T.L. Einstein, M.S. Fuhrer, W.G. Cullen, Anisotropic etching of atomically thin MoS2, J. Phys. Chem. C 117 (2013) 25643-25649, doi: 10.1021/jp410893e.

[85]

J. Li, S. Hu, Z. Chen, Y. Liang, H. Kang, Y. Zhang, Y. Sui, S. Wang, G. Yu, S. Peng, Z. Jin, X. Liu, Facile and rigorous route to distinguish the boundary structure of monolayer MoS2 domains by oxygen etching, Appl. Surf. Sci. 510 (2020) 145412, doi: 10.1016/j.apsusc.2020.145412.

[86]

R. Ionescu, A. George, I. Ruiz, Z. Favors, Z. Mutlu, C. Liu, K. Ahmed, R. Wu, J.S. Jeong, L. Zavala, K.A. Mkhoyan, M. Ozkan, C.S. Ozkan, Oxygen etching of thick MoS2 films, Chem. Commun. 50 (2014) 11226-11229, doi: 10.1039/c4cc03911d.

[87]

Y. Ryu, W. Kim, S. Koo, H. Kang, K. Watanabe, T. Taniguchi, S. Ryu, Interface-confined doubly anisotropic oxidation of two-dimensional MoS2, Nano Lett. 17 (2017) 7267-7273, doi: 10.1021/acs.nanolett.7b02621.

[88]

U.A. Schröder, E. Grånäs, T. Gerber, M.A. Arman, A.J. Martínez-Galera, K. Schulte, J.N. Andersen, J. Knudsen, T. Michely, Etching of graphene on Ir(111) with molecular oxygen, Carbon N Y 96 (2016) 320-331, doi: 10.1016/j.carbon.2015.09.063.

[89]

J. Wu, H. Li, Z. Yin, H. Li, J. Liu, X. Cao, Q. Zhang, H. Zhang, Layer thinning and etching of mechanically exfoliated MoS2 nanosheets by thermal annealing in air, Small. 9 (2013) 3314-3319, doi: 10.1002/smll.201301542.

[90]

D. Lv, H. Wang, D. Zhu, J. Lin, G. Yin, F. Lin, Z. Zhang, C. Jin, Atomic process of oxidative etching in monolayer molybdenum disulfide, Sci. Bull. 62 (2017) 846-851, doi: 10.1016/j.scib.2017.05.016.

[91]

Q. Yuan, J. Gao, H. Shu, J. Zhao, X. Chen, F. Ding, Magic carbon clusters in the chemical vapor deposition growth of graphene, J. Am. Chem. Soc. 134 (2012) 2970-2975, doi: 10.1021/ja2050875.

[92]

D.W. Brenner, O.A. Shenderova, J.A. Harrison, S.J. Stuart, B. Ni, S.B. Sinnott, A second-generation reactive empirical bond order (REBO) potential energy expression for hydrocarbons, J. Phys. Condens. Mat. 14 (2002) 783-802, doi: 10.1088/0953-8984/14/4/312.

[93]

F.H. Yang, R.T. Yang, Ab initio molecular orbital study of the mechanism of SO2 oxidation catalyzed by carbon, Carbon N Y 41 (2003) 2149-2158, doi: 10.1016/S0008-6223(03)00249-5.

[94]

J.L. Li, K.N. Kudin, M.J. McAllister, R.K. Prud’homme, I.A. Aksay, R. Car, Oxygen-driven unzipping of graphitic materials, Phys. Rev. Lett. 96 (2006) 176101, doi: 10.1103/PhysRevLett.96.176101.

[95]

R.F. Sekerka, Equilibrium and growth shapes of crystals: how do they differ and why should we care? Cryst. Res. Technol. 40 (2005) 291-306, doi: 10.1002/crat.200410342.

[96]

Z. Huang, W. Deng, Z. Zhang, B. Zhao, H. Zhang, D. Wang, B. Li, M. Liu, Y. Huangfu, X. Duan, Terminal atom-controlled etching of 2D-TMDs, Adv. Mater. 35 (2023) 2211252, doi: 10.1002/adma.202211252.

[97]

H. Liu, Y. Zhang, R. Li, X. Sun, F. Wang, Z. Ding, P. Mérel, S. Desilets, Aligned synthesis of multi-walled carbon nanotubes with high purity by aerosol assisted chemical vapor deposition: Effect of water vapor, Appl. Surf. Sci. 256 (2010) 4692-4696, doi: 10.1016/j.apsusc.2010.02.074.

[98]

X. Feng, S.W. Chee, R. Sharma, K. Liu, X. Xie, Q. Li, S. Fan, K. Jiang, In situ TEM observation of the gasification and growth of carbon nanotubes using iron catalysts, Nano Res. 4 (2011) 767, doi: 10.1007/s12274-011-0133-x.

[99]

W. Zhou, S. Zhan, L. Ding, J. Liu, General rules for selective growth of enriched semiconducting single walled carbon nanotubes with water vapor as in situ etchant, J. Am. Chem. Soc. 134 (2012) 14019-14026, doi: 10.1021/ja3038992.

[100]

D. Luo, F. Yang, X. Wang, H. Sun, D. Gao, R. Li, J. Yang, Y. Li, Anisotropic etching of graphite flakes with water vapor to produce armchair-edged graphene, Small 10 (2014) 2809-2814, doi: 10.1002/smll.201400007.

[101]

A. Kaniyoor, T.T. Baby, T. Arockiadoss, N. Rajalakshmi, S. Ramaprabhu, Wrinkled graphenes: a study on the effects of synthesis parameters on exfoliation-reduction of graphite oxide, J. Phys. Chem. C 115 (2011) 17660-17669, doi: 10.1021/jp204039k.

[102]

D. Yang, A. Velamakanni, G. Bozoklu, S. Park, M. Stoller, R.D. Piner, S. Stankovich, I. Jung, D.A. Field, C.A. Ventrice, R.S. Ruoff, Chemical analysis of graphene oxide films after heat and chemical treatments by X-ray photoelectron and micro-Raman spectroscopy, Carbon N Y 47 (2009) 145-152, doi: 10.1016/j.carbon.2008.09.045.

[103]

C. Botas, P. Álvarez, C. Blanco, R. Santamaría, M. Granda, M.D. Gutiérrez, F. Rodríguez-Reinoso, R. Menéndez, Critical temperatures in the synthesis of graphene-like materials by thermal exfoliation-reduction of graphite oxide, Carbon N Y 52 (2013) 476-485, doi: 10.1016/j.carbon.2012.09.059.

[104]

R. Yang, L. Zhang, Y. Wang, Z. Shi, D. Shi, H. Gao, E. Wang, G. Zhang, An anisotropic etching effect in the graphene basal plane, Adv. Mater. 22 (2010) 4014-4019, doi: 10.1002/adma.201000618.

[105]

B. Ma, S. Ren, P. Wang, C. Jia, X. Guo, Precise control of graphene etching by remote hydrogen plasma, Nano Res. 12 (2019) 137-142, doi: 10.1007/s12274-018-2192-8.

[106]

C.H. Park, L. Yang, Y.W. Son, M.L. Cohen, S.G. Louie, Anisotropic behaviours of massless Dirac fermions in graphene under periodic potentials, Nat. Phys. 4 (2008) 213-217, doi: 10.1038/nphys890.

[107]

D.R. Danielsen, A. Lyksborg-Andersen, K.E.S. Nielsen, B.S. Jessen, T.J. Booth, M.H. Doan, Y. Zhou, P. Boggild, L. Gammelgaard, Super-resolution nanolithography of two-dimensional materials by anisotropic etching, ACS Appl. Mater. Interfaces 13 (2021) 41886-41894, doi: 10.1021/acsami.1c09923.

[108]

K. Ghatak, K.N. Kang, E.-H. Yang, D. Datta, Controlled edge dependent stacking of WS2-WS2 homo- and WS2-WSe2 hetero-structures: A computational study, Sci. Rep. 10 (2020) 1648, doi: 10.1038/s41598-020-58149-6.

[109]

A.C.H. Da Silva, N.A.M.S. Caturello, R. Besse, M.P. Lima, J.L.F. Da Silva, Edge, size, and shape effects on WS2, WSe2, and WTe2 nanoflake stability: Design principles from an ab initio investigation, Phys. Chem. Chem. Phys. 21 (2019) 23076-23084, doi: 10.1039/C9CP03698A.

[110]

J. He, K. Hummer, C. Franchini, Stacking effects on the electronic and optical properties of bilayer transition metal dichalcogenides, Phys. Rev. B 89 (2014) 075409, doi: 10.1103/PhysRevB.89.075409.

[111]

Q. Zhang, W. He, L. Li, D. Geng, Z. Xu, H. Chen, W. Chen, W. Hu, Oxygen-assisted anisotropic chemical etching of MoSe2 for enhanced phototransistors, Chem. Mater. 34 (2022) 4212-4223, doi: 10.1021/acs.chemmater.2c00694.

[112]

T. Ma, W. Ren, Z. Liu, L. Huang, L.P. Ma, X. Ma, Z. Zhang, L.M. Peng, H.M. Cheng, Repeated growth-etching-regrowth for large-area defect-free single-crystal graphene by chemical vapor deposition, ACS Nano 8 (2014) 12806-12813, doi: 10.1021/nn506041t.

[113]

W. Guo, F. Jing, J. Xiao, C. Zhou, Y. Lin, S. Wang, Oxidative-etching-assisted synthesis of centimeter-sized single-crystalline graphene, Adv. Mater. 28 (2016) 3152-3158, doi: 10.1002/adma.201503705.

[114]

Z. Qi, H. Shi, M. Zhao, H. Jin, S. Jin, X. Kong, R.S. Ruoff, S. Qin, J. Xue, H. Ji, Chemical vapor deposition growth of bernal-stacked bilayer graphene by edge-selective etching with H2O, Chem. Mater. 30 (2018) 7852-7859, doi: 10.1021/acs.chemmater.8b03393.

[115]

L. Liu, J. Park, D.A. Siegel, K.F. McCarty, K.W. Clark, W. Deng, L. Basile, J.C. Idrobo, A.-P. Li, G. Gu, Heteroepitaxial growth of two-dimensional hexagonal boron nitride templated by graphene edges, Science 343 (2014) 163-167, doi: 10.1126/science.1246137.

[116]

X. Chen, H. Yang, B. Wu, L. Wang, Q. Fu, Y. Liu, Epitaxial growth of h-BN on templates of various dimensionalities in h-BN-graphene material systems, Adv. Mater. 31 (2019) 1805582, doi: 10.1002/adma.201805582.

PDF (7372KB)

0

Accesses

0

Citation

Detail

Sections
Recommended

/