Utilization of an 810 nm diode laser for the eradication of Staphylococcus aureus on implant surfaces: an in vitro study

Abstract

Peri-implantitis is a prevalent complication in dental implantology, often resulting from bacterial contamination on implant surfaces. Researchers have explored diode lasers as a promising alternative for bacterial decontamination. In this study, we evaluated the effectiveness of the 810 nm diode laser in eliminating Staphylococcus aureus from titanium implant surfaces. This investigation was designed as a controlled, standardized in vitro laboratory experiment. A total of 95 titanium implants were divided into the following groups: (1) A negative control group (n = 5): New integrity implants; (2) a positive control group (n = 6): Implants contaminated with a S. aureus suspension and left untreated; and (3) four intervention groups (n = 21 for each group): Implants contaminated and then treated with the 810 nm diode laser at varying power settings (1 W, 1.5 W, 2 W, 2.5 W) for 3 minutes. Bacterial load was quantified using colony-forming unit analysis, while surface roughness and morphology were assessed with a surface roughness tester and scanning electron microscopy (SEM) after laser treatment. The results showed that all intervention groups demonstrated significant reductions in bacterial load compared to the positive control group, with bacterial reduction increasing with higher laser power. The 2.5 W settings proved most effective in decontamination, although none of the laser settings completely eradicated the bacteria. Laser treatment did not result in significant changes in implant surface roughness, suggesting its safety for use in surface decontamination without compromising implant integrity. This technology may represent a safer, more effective approach to implant surface decontamination than traditional methods.

Keywords

810 nm diode laser / Staphylococcus aureus / titanium implants / dental implant surface / laser eradication / in vitro study

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