Deformation mechanism of gallium nitride in nanometric cutting

Xu Ma; Min Lai; Feng-Zhou Fang

doi:10.1007/s40436-024-00534-9

Advances in Manufacturing ›› : 1 -12. DOI: 10.1007/s40436-024-00534-9

Article

Deformation mechanism of gallium nitride in nanometric cutting

Xu Ma ¹
, Min Lai ¹^,^a
, Feng-Zhou Fang ¹^,²

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¹State Key Laboratory of Precision Measuring Technology and Instruments, Laboratory of Micro/Nano Manufacturing Technology (MNMT), Tianjin University, 300072, Tianjin, People’s Republic of China

²Centre of Micro/Nano Manufacturing Technology (MNMT-Dublin), School of Mechanical & Materials Engineering, University College Dublin, Dublin 4, Ireland

Corresponding author:

^a laimin@tju.edu.cn

Xu Ma

Xu Ma is a master candidate at the Laboratory of Micro/Nano Manufacturing Technology (MNMT), Tianjin University. He received a bachelor’s degree from Tianjin University in 2021. His research interest is ultra-precision cutting.

Min Lai

Min Lai is an associate professor from Tianjin University and the member in the Laboratory of Micro/Nano Manufacturing Technology (MNMT). She received her Ph.D. from Tianjin University in 2016. Her main research interests focus on the ultra-precision machining mechanisms and micro/nano manufacturing technology.

Feng-Zhou Fang

Feng-Zhou Fang is a joint professor and the director of Laboratory of Micro/Nano Manufacturing Technology (MNMT) in both Tianjin University and University College Dublin. He received his Ph.D. in Manufacturing Engineering from the Harbin Institute of Technology and has been working in the field of manufacturing since 1982. He has conducted both fundamental studies and application development in the areas of micro/nano manufacturing optical freeform design and manufacturing, and ultraprecision machining and measurement, benefiting a variety of industries in the medical device, bio-implant, optics and mold sectors.

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Abstract

Gallium nitride (GaN) is a third-generation semiconductor and an important optical material requiring high surface integrity. In this study, molecular dynamics simulations were conducted to investigate the machining mechanism of single-crystal GaN during nanometric cutting. The stress distribution and generation/motion of dislocations in GaN during nanometric cutting were found to be closely related to slip systems. The relationship between the crystal phase transformation and dislocations during cutting was also identified. Microcracks occur during the unloading of stress perpendicular to the (0 0 0 1) plane. The fluctuation of the cutting forces during cutting was explained from the perspective of crystal phase transformation. This study helps understand the deformation mechanism of materials with hexagonal close-packed crystal structures in nanometric cutting and promotes the development of relevant mechanical processing technologies.

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Xu Ma, Min Lai, Feng-Zhou Fang. Deformation mechanism of gallium nitride in nanometric cutting. Advances in Manufacturing 1-12 DOI:10.1007/s40436-024-00534-9

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