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Hao-Hui Long (Fellow IET, Fellow IES, SM IEEE) received the Ph.D. degree from National University of Singapore (NUS), in 2006, He received his B.S and M.S degrees from HUST, China in 1999 and 2002, respectively. From 2002 to 2005, He was research assistant at Dept. of ECE, NUS and A*STAR Data Storage Institute with the sponsorship of A*STAR-DSI scholarship. After graduation at Nov. 2005, he served as a failure analysis engineer with Hitachi Global Storage Technology. In 2007, he joined Chartered Semiconductor at Singapore (Now, Global Foundries) as a senior Requalification engineer. He moved to NOKIA in 2008 as failure analysis specialist. After 2011, He joined Huawei device. And he is currently the Huawei Scientist, Chief Reliability Expert, Director of Reliability TMG and Head of Display design for reliability and failure analysis Dept. Dr. Long has been a Fellow of IET (The Institution of Engineering and Technology) and IES (Institution of Engineers, Singapore) since 2022, senior member of IEEE since 2010. He provided his service as IEEE EPS Reliability technical committee, the TC member of IEEE EPTC, ICEPT, REPP, APEMC, IPFA, IFETC; the chair of “Advanced optoelectronics and Displays” tech committee of IEEE EPTC, chair of “Heterogeneous and Hybrid Integration” of IEEE IFETC (2022) conference, co-chair of “Advanced Packaging” and “Optoelectronics and New Display” two sessions of IEEE ICEPT (2022) conference with publishing 27 Journal and international conference papers, and holding around 100 granted and pending US/WO/JP/PCT/CN/EP patents in LENS database. Also, he is Huawei Postdoctoral Mentor and guest professor at the institute of technological sciences of Wuhan University. His current research interests include Heterogeneous Integration, HiSID (Heterogeneous Integration System in Display), Chip and package level reliability, and display module reliability focused on foldable and flexible, MicroLED; Design for Reliability and Failure Analysis. Dr. Long has also made some accomplishments on the standardization, he received distinguished committee service award from IPC for his contributions on testing and qualification of surface amount solder attachment standard IPC-9701A. [graphic not available: see fulltext]
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Hui-Cai Ma (Member, IEEE) received the Ph.D. degree from the Institute of Metal Research, University of Chinese Academy of Sciences at Shenyang, Liaoning, China, in 2017. He is currently a senior reliability engineer of terminal devices in Huawei Device Co., Ltd, where he studies the board level reliability, chip packaging design and reliability. [graphic not available: see fulltext]
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Jia-Ying Gao received his Ph.D. degree in Mechanical Engineering from Northwestern University at Evanston, Illinois, U.S.A. in 2020. He joined Huawei Device Co., Ltd. as a senior Research and Development Engineer. His research interest is in simulation and AI driven material discovery for advanced display technology. [graphic not available: see fulltext]
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Li Zhang (Member, IEEE) received the B. A. degree in microelectronics from Nankai University at Tianjin in 2012 and the Ph.D. degree from Peking University at Beijing,China,in 2017. After his Ph.D. degree, he joined Huawei Device Co., Ltd. Currently he is a principle reliability and process engineer and mainly focuses on advanced package and minimization technology in display. [graphic not available: see fulltext]
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De-Ming Zhang received the Ph.D. degree from the Zhejiang University at Hangzhou, Zhejiang, China, in 2020. After his Ph.D. degree, he joined Huawei Device Co., Ltd. as a senior Research and Development Engineer. His research interest is the finite element method and on-board display design and reliability. [graphic not available: see fulltext]
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Jian-Qiu Chen received the Ph.D. degree from the South China University of Technology at Guangzhou, Guangdong, China, in 2020. After his Ph.D. degree, he joined Huawei Device Co., Ltd. as a senior Research and Development Engineer. His research interest is the advanced display technology, mass transfer and mini/micro LED displays. [graphic not available: see fulltext]
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