Study into grinding force in back grinding of wafer with outer rim

Abstract

Back grinding of wafer with outer rim (BGWOR) is a new method for carrier-less thinning of silicon wafers. At present, the effects of process parameters on the grinding force remain debatable. Therefore, a BGWOR normal grinding force model based on grain depth-of-cut was established, and the relationship between grinding parameters (wheel infeed rate, wheel rotational speed, and chuck rotational speed) and normal grinding force was discussed. Further, a series of experiments were performed to verify the BGWOR normal grinding force model. This study proves that the BGWOR normal grinding force is related to the rotational direction of the wheel and chuck, and the effect of grinding mark density on the BGWOR normal grinding force cannot be ignored. Moreover, this study provides methods for reducing the grinding force and optimizing the back thinning process of the silicon wafer.

Keywords

Silicon wafer / Back grinding of wafer with outer rim (BGWOR) / Grinding force / Grinding mark density

References

[1] Zhang YX, Kang RK, Guo DM, et al. Raman microspectroscopy study on the ground surface of monocrystalline silicon wafers. Key Eng Mater, 2006, 304/305: 241-245.

[2] Zhou P, Xu S, Wang Z, et al. A load identification method for the grinding damage induced stress (GDIS) distribution in silicon wafers. Int J Mach Tools Manuf, 2016, 107: 1-7.

[3] Gao S, Kang RK, Guo DM, et al. Study on the subsurface damage distribution of the silicon wafer ground by diamond wheel. Adv Mater Res, 2010, 126/128: 113-118.

[4] Bieck F, Spiller S, Molina F et al (2010) Integration of carrierless ultrathin wafers into a TSV process flow. In: The 12th electronics packaging technology conference, 8–10 Dec 2010, Singapore. https://doi.org/10.1109/EPTC.2010.5702703

[5] Burghartz JN. Ultra-thin chip technology and applications, 2011, New York: Springer.

[6] Schröder S, Schröder M, Reinert W et al (2016) TAIKO wafer ball attach. In: IEEE 18th electronics packaging technology conference (EPTC), 30 Nov–3 Dec 2016, Singapore. https://doi.org/10.1109/EPTC.2016.7861519

[7] Inoue F, Jourdain A, Peng L, et al. Influence of Si wafer thinning processes on (sub)surface defects. Appl Surf Sci, 2017, 404: 82-87.

[8] Sun J, Qin F, Chen P, et al. A predictive model of grinding force in silicon wafer self-rotating grinding. Int J Mach Tools Manuf, 2016, 109: 74-86.

[9] Pei ZJ, Strasbaugh A. Fine grinding of silicon wafers: designed experiments. Int J Mach Tools Manuf, 2002, 42: 395-404.

[10] Zhang YX, Li YM, Gao W, et al. Experimental investigation on subsurface damage depth of ground silicon wafers in wafer-rotating grinding. Diam Abras Eng, 2008, 4: 3-7.

[11] Young HT, Liao HT, Huang HY. Novel method to investigate the critical depth of cut of ground silicon wafer. J Mater Process Technol, 2007, 182: 157-162.

[12] Lin B, Zhou P, Wang Z, et al. Analytical elastic-plastic cutting model for predicting grain depth-of-cut in ultrafine grinding of silicon wafer. J Manuf Sci Eng Trans ASME, 2018, 140: 1-7.

[13] Gao S, Wang Z, Kang R, et al. Model of grain depth of cut in wafer rotation grinding method for silicon wafers. J Mech Eng, 2016, 52(17): 86-93.

[14] Sun J, Chen P, Qin F, et al. Modelling and experimental study of roughness in silicon wafer self-rotating grinding. Precis Eng, 2018, 51: 625-637.

[15] Zhang L, Chen P, An T, et al. Analytical prediction for depth of subsurface damage in silicon wafer due to self-rotating grinding process. Curr Appl Phys, 2019, 19: 570-581.

[16] Sharp KW, Miller MH, Scattergood RO. Analysis of the grain depth-of-cut in plunge grinding. Precis Eng, 2000, 24: 220-230.

[17] Zhou L, Shimizu J, Shinohara K, et al. Three-dimensional kinematical analyses for surface grinding of large scale substrate. Precis Eng, 2003, 27: 175-184.

[18] Zhu X, Kang R, Wang Y, et al. Development of three-dimensional dynamometer for wafer grinder. Adv Mater Res, 2010, 126/128: 361-366.

[19] Pähler D. Measurement of local contact zone forces in rotational grinding of silicon wafers. Int J Mechatron Manuf Syst, 2011, 4: 511-539.

[20] Ebina Y, Yoshimatsu T, Zhou L, et al. Process study on large-size silicon wafer grinding by using a small-diameter wheel. J Adv Mech Des Syst Manuf, 2015, 9: 1-12.

[21] Pei ZJ, Strasbaugh A. Fine grinding of silicon wafers: grinding marks. ASME Int Mech Eng Congr Expos Proc, 2002, 42: 311-320.

[22] Chidambaram S, Pei ZJ, Kassir S. Fine grinding of silicon wafers: a mathematical model for grinding marks. Int J Mach Tools Manuf, 2003, 43: 1595-1602.

[23] Huo FW, Kang RK, Li Z, et al. Origin, modeling and suppression of grinding marks in ultra precision grinding of silicon wafers. Int J Mach Tools Manuf, 2013, 66: 54-65.

Funding

the National Key Research and Development Program of China(2016YFB1102205)

National Natural Science Foundation of China http://dx.doi.org/10.13039/501100001809(51775084)