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Frontiers of Optoelectronics

Front. Optoelectron.    2016, Vol. 9 Issue (2) : 306-311     DOI: 10.1007/s12200-016-0599-y
RESEARCH ARTICLE |
Influence of temperature and reverse bias on photocurrent spectrum and supra-bandgap spectral response of monolithic GaInP/GaAs double-junction solar cell
Zhuo DENG1,Jiqiang NING1,2,Rongxin WANG2,Zhicheng SU1,Shijie XU1,*(),Zheng XING2,Shulong LU2,Jianrong DONG2,Hui YANG2
1. Department of Physics, HKU-Shenzhen Institute of Research and Innovation (HKU-SIRI), The University of Hong Kong, Hong Kong, China
2. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
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Abstract

In this paper, influence of temperature and reverse bias on photocurrent spectrum and spectral response of a monolithic GaInP/GaAs double-junction solar cell was investigated in detail. Two sharp spectral response offsets, corresponding to the bandedge photo absorption of the bottom GaAs and the top GaInP subcells, respectively, show the starting response points of individual subcells. More interestingly, the cell photocurrent was found to enhance significantly with increasing the temperature. In addition, the cell photocurrent also increases obviously as the reverse bias voltage increases. The integrated photocurrent intensity of the top GaInP subcell was particularly addressed. A theoretical model was proposed to simulate the reverse bias dependence of the integrated photocurrent of the GaInP subcell at different temperatures.

Keywords GaInP alloy      GaAs      solar cell      photocurrent     
Corresponding Authors: Shijie XU   
Just Accepted Date: 18 February 2016   Online First Date: 29 March 2016    Issue Date: 05 April 2016
 Cite this article:   
Zhuo DENG,Jiqiang NING,Rongxin WANG, et al. Influence of temperature and reverse bias on photocurrent spectrum and supra-bandgap spectral response of monolithic GaInP/GaAs double-junction solar cell[J]. Front. Optoelectron., 2016, 9(2): 306-311.
 URL:  
http://journal.hep.com.cn/foe/EN/10.1007/s12200-016-0599-y
http://journal.hep.com.cn/foe/EN/Y2016/V9/I2/306
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Zhuo DENG
Jiqiang NING
Rongxin WANG
Zhicheng SU
Shijie XU
Zheng XING
Shulong LU
Jianrong DONG
Hui YANG
Fig.1  Photocurrent spectra recorded from Sample 2° at different temperatures without the application of external bias voltage. Several spectral features are indicated by arrows and labels
Fig.2  ?Temperature dependence (solid squares) of the photocurrent sharp peak due to the bandedge absorption of GaInP in the top subcell. Solid line is the fitting curve with the Varshni empirical formula
Fig.3  Photocurrent spectra measured from Sample 2° at 10, 80, 160 and 300 K for different reverse bias voltages. The reverse bias voltage increases from 0 to -4 V. Several spectral features are marked by arrows and labels in the bottom figure
Fig.4  ?Dependences of the integrated intensity of photocurrent with energy≥EGaInP on the reverse bias voltage at different temperatures excerpted from Fig. 3. Theoretical fitting curves with Eq. (9) are also shown by the solid curves at each temperature
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