Tuning the band gap of the CIGS solar buffer layer Cd1−xZn xS (x=0–1) to achieve high efficiency

Zhiyuan Tan, Yuming Xue, Hongli Dai, Luoxin Wang, Xiaofeng Hu, Xin Bai

Optoelectronics Letters ›› 2024, Vol. 20 ›› Issue (2) : 100-106. DOI: 10.1007/s11801-024-2222-6
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Tuning the band gap of the CIGS solar buffer layer Cd1−xZn xS (x=0–1) to achieve high efficiency

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Abstract

To evaluate the impact of zinc sulfate (ZnSO4) concentration on the structural properties of the films, Cd1−xZn xS thin films were formed on glass substrates using chemical bath deposition (CBD) in this study. The effect of ZnSO4 precursor concentration on the surface morphology, optical properties, and morphological structure of the Cd1−xZn xS films was investigated. To study the impact of zinc doping content on the performance metrics of Cu(In1−xGa x)Se2 (CIGS) cells in the experimental group and to improve the buffer layer thickness, simulations were run using one-dimensional solar cell capacitance simulator (SCAPS-1D) software.

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Zhiyuan Tan, Yuming Xue, Hongli Dai, Luoxin Wang, Xiaofeng Hu, Xin Bai. Tuning the band gap of the CIGS solar buffer layer Cd1−xZn xS (x=0–1) to achieve high efficiency. Optoelectronics Letters, 2024, 20(2): 100‒106 https://doi.org/10.1007/s11801-024-2222-6

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