Study on the oxidation mechanism of Al-SiC composite at elevated temperature

Abstract

Resin-bonded Al-SiC composite was sintered at 1100, 1300, and 1500°C in the air, the oxidation mechanism was investigated. The reaction models were also established. The oxidation resistance of the Al-SiC composite was significantly enhanced with temperature increase. SiC in the exterior of the composite was partially oxidized slightly, while the transformation of metastable Al₄C₃ to stable Al₄SiC₄ existed in the interior. At 1100°C, Al in the interior reacted with residual C to form Al₄C₃. With increasing to 1300°C, high temperature and low oxygen partial pressure lead to active oxidation of SiC, and internal gas composition transforms to Al₂O(g) + CO(g) + SiO(g) as the reaction proceeds. After Al₄C₃ is formed, CO(g) and SiO(g) are continuously deposited on its surface, transforming to Al₄SiC₄. At 1500°C, a dense layer consisting of SiC and Al₄SiC₄ whiskers is formed which cuts off the diffusion channel of oxygen. The active oxidation of SiC is accelerated, enabling more gas to participate in the synthesis of Al₄SiC₄, eventually forming hexagonal lamellar Al₄SiC₄ with mutual accumulation between SiC particles. Introducing Al enhances the oxidation resistance of SiC. In addition, the in situ generated non-oxide is uniformly dispersed on a micro-scale and bonds SiC stably.

Keywords

Al-SiC composite / kiln furniture / Al₄SiC₄ / Al₄C₃ / oxidation mechanism

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