REVIEW ARTICLE

Progress in research on ice accretions on overhead transmission lines and its influence on mechanical and insulating performance

  • Shaohua WANG , 1 ,
  • Xingliang JIANG 1
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  • 1. Zhejiang Electric Power Test and Research Institute, Hangzhou 310014, China
  • 2. College of Electrical Engineering, Chongqing University, Chongqing 400044, China

Received date: 02 Jun 2011

Accepted date: 04 Mar 2012

Published date: 05 Sep 2012

Copyright

2014 Higher Education Press and Springer-Verlag Berlin Heidelberg

Abstract

Atmospheric ice accretion on transmission lines is of great danger to the security of service of electrical power system. This paper reviews the progress in research dealing with the formation of ice accretions on transmission lines and the effects of ice on the mechanical and electrical performance of transmission lines. The results show that ice accretions on transmission lines can be categorized into five types: glaze, hard rime, soft rime, hoar frost, and snow and sleet. In all types of ice accretions, glaze grown in a wet regime is of the greatest danger to the transmission lines. Meteorological conditions, terrain and geographic conditions, and some other factors significantly influence the ice accumulation speed and the ice amount. Drastic decrease of mechanical property and electric property as a result of severe icing is the main reason for ice accidents. The amount of ice, the asymmetrical ice accretion, and the asynchronous ice shedding can considerably change the conductor strain, conductor sag, variation amount of the span, displacement of the insulator string, and the tension difference. The amount and type of ice, the uniformity of ice accumulation, and the conductivity of freezing water have significant influence on the flashover voltage of ice-covered insulators.

Cite this article

Shaohua WANG , Xingliang JIANG . Progress in research on ice accretions on overhead transmission lines and its influence on mechanical and insulating performance[J]. Frontiers of Electrical and Electronic Engineering, 2012 , 7(3) : 326 -336 . DOI: 10.1007/s11460-012-0197-8

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