Two-dimensional subthreshold current model for dual-material gate SOI nMOSFETs with single halo

Abstract

A two-dimensional (2D) model for the subthreshold current in the dual-material gate (DMG) silicon-on-insulator (SOI) MOSFET with a single halo is presented. The model considers single halo doping in the channel near the source and a dual-material gate to derive the channel potential using the explicit solution of the 2D Poisson’s equation. Together with the conventional drift-diffusion theory, this results in the development of a subthreshold current model for the novel structure. Model verification is carried out using the 2D device simulator ISE. Excellent agreement is obtained between the calculations and the simulated results of the model.

Keywords

dual-material gate (DMG) / silicon-on-insulator (SOI) / electron mobility

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (Grant No. 60206006).

RIGHTS & PERMISSIONS

2014 Higher Education Press and Springer-Verlag Berlin Heidelberg