Hybrid 2D/3D Graphitic Carbon Nitride-Based High-Temperature Position-Sensitive Detector

Abstract

Ultraviolet position-sensitive detectors (PSDs) are expected to undergo harsh environments, such as high temperatures, for a wide variety of applications in military, civilian, and aerospace. However, no report on relevant PSDs operating at high temperatures can be found up to now. Herein, we design a new 2D/3D graphitic carbon nitride (g-C₃N₄)/gallium nitride (GaN) hybrid heterojunction to construct the ultraviolet high-temperature-resistant PSD. The g-C₃N₄/GaN PSD exhibits a high position sensitivity of 355 mV mm^-1, a rise/fall response time of 1.7/2.3 ms, and a nonlinearity of 0.5% at room temperature. The ultralow formation energy of -0.917 eV atom^-1 has been obtained via the thermodynamic phase stability calculations, which endows g-C₃N₄ with robust stability against heat. By merits of the strong built-in electric field of the 2D/3D hybrid heterojunction and robust thermo-stability of g-C₃N₄, the g-C₃N₄/GaN PSD delivers an excellent position sensitivity and angle detection nonlinearity of 315 mV mm^-1 and 1.4%, respectively, with high repeatability at a high temperature up to 700 K, outperforming most of the other counterparts and even commercial silicon-based devices. This work unveils the high-temperature PSD, and pioneers a new path to constructing g-C₃N₄-based harsh-environment-tolerant optoelectronic devices.

Keywords

graphitic carbon nitride / high-temperature stability / lateral photovoltaic effect / position-sensitive detectors / two-dimensional materials

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