%A Junran Zhang, Ming Gao, Jinglei Zhang, Xuefeng Wang, Xiaoqian Zhang, Minhao Zhang, Wei Niu, Rong Zhang, Yongbing Xu %T Transport evidence of 3D topological nodal-line semimetal phase in ZrSiS %0 Journal Article %D 2018 %J Front. Phys. %J Frontiers of Physics %@ 2095-0462 %R 10.1007/s11467-017-0705-7 %P 137201- %V 13 %N 1 %U {https://journal.hep.com.cn/fop/EN/10.1007/s11467-017-0705-7 %8 2018-02-28 %X

Topological nodal-line semimetal is a new emerging material, which is viewed as a three-dimensional (3D) analog of graphene with the conduction and valence bands crossing at Dirac nodes, resulting in a range of exotic transport properties. Herein, we report on the direct quantum transport evidence of the 3D topological nodal-line semimetal phase of ZrSiS with angular-dependent magnetoresistance (MR) and the combined de Hass-van Alphen (dHvA) and Shubnikov-de Hass (SdH) oscillations. Through fitting by a two-band model, the MR results demonstrate high topological nodal-line fermion densities of approximately 6×1021 cm−3 and a perfect electron/hole compensation ratio of 0.94, which is consistent with the semi-classical expression fitting of Hall conductance Gxy and the theoretical calculation. Both the SdH and dHvA oscillations provide clear evidence of 3D topological nodal-line semimetal characteristic.