%A Xianjie LI, Yonglin ZHAO, Daomin CAI, Qingming ZENG, Yunzhang PU, Yana GUO, Zhigong WANG, Rong WANG, Ming QI, Xiaojie CHEN, Anhuai XU %T Monolithically integrated long wavelength photoreceiver OEIC based on InP/InGaAs HBT technology %0 Journal Article %D 2008 %J Front. Optoelectron. %J Frontiers of Optoelectronics %@ 2095-2759 %R 10.1007/s12200-008-0059-4 %P 336-340 %V 1 %N 3-4 %U {https://journal.hep.com.cn/foe/EN/10.1007/s12200-008-0059-4 %8 2008-08-05 %X
The epitaxial structure and growth, circuit design, fabrication process and characterization are described for the photoreceiver opto-electronic integrated circuit (OEIC) based on the InP/InGaAs HBT/PIN photodetector integration scheme. A 1.55 μm wavelength monolithically integrated photoreceiver OEIC is demonstrated with self-aligned InP/InGaAs heterojunction bipolar transistor (HBT) process. The InP/InGaAs HBT with a 2 μm × 8 μm emitter showed a DC gain of 40, a DC gain cutoff frequency of 45 GHz and a maximum frequency of oscillation of 54 GHz. The integrated InGaAs photodetector exhibited a responsivity of 0.45 A/W at