%A Cihui LIU, Ran YAO, Jianfeng SU, Zeyu MA, Zhuxi FU %T Luminescence and recombine centre in ZnO/Si films %0 Journal Article %D 2009 %J Front. Electr. Electron. Eng. %J Frontiers of Electrical and Electronic Engineering %@ 2095-2732 %R 10.1007/s11460-008-0081-8 %P 93-97 %V 4 %N 1 %U {https://journal.hep.com.cn/fee/EN/10.1007/s11460-008-0081-8 %8 2009-03-05 %X

The D0h luminescence of ZnO films deposited on p-type Si substrates is produced by metal-organic chemical vapor deposition (MOCVD). After annealing in the air at 700°C for an hour, the photoluminescence (PL) spectra, the I-V characteristics and the deep level transient spectroscopy (DLTS) of the samples are measured. All the samples have a rectification characteristic. DLTS signals show two deep levels of E1 and E2. The Gaussian fit curves of the PL spectra at room temperature show three luminescence lines b, c and d, of which b is attributed to the exciton emission. The donor level E1 measured by DLTS and the location state donor ionization energy Ed of the closely neighboring emission lines c and d are correlated. E1 is judged as neutral donor bound to hole emission (D0h). Moreover, the intensity of the PL spectra decreases while the relative density of E2 increases, showing that E2 has the property of a non-radiative center.