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Frontiers of Optoelectronics

Front. Optoelectron.    2016, Vol. 9 Issue (1) : 87-92     DOI: 10.1007/s12200-016-0596-1
RESEARCH ARTICLE |
Green light-emitting diode based on graphene-ZnO nanowire van der Waals heterostructure
Zhiqian WU1,2,Yue SHEN2,*(),Xiaoqiang LI1,3,Qing YANG3,Shisheng LIN1,3,*()
1. College of Microelectronics, College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
2. State Key Laboratory of Materials Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
3. State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027, China
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Abstract

The rectifying behavior between graphene and semiconductors makes novel type of solar cells, photodetectors and light emitting diodes (LEDs). The interface between graphene and ZnO is the key for the performance of the optoelectronic devices. Herein, we find that green light emission is very strong for the forward biased graphene/ZnO nanowire van der Waals heterostructure. We correlated the green light emission with the surface defects locating at the ZnO nanowire surface through the detailed high resolution transmission electron microscopy and photoluminescence measurements. We pointed out engineering the surface of ZnO nanowires could bring a dimension of designing graphene/ZnO LEDs, which could be extended to other types of graphene/semiconductor heterostructure based optoelectronic devices.

Keywords ZnO nanowire      van der Waals heterostructure      light-emitting diode (LED)     
Corresponding Authors: Yue SHEN,Shisheng LIN   
Online First Date: 18 February 2016    Issue Date: 18 March 2016
 Cite this article:   
Zhiqian WU,Yue SHEN,Xiaoqiang LI, et al. Green light-emitting diode based on graphene-ZnO nanowire van der Waals heterostructure[J]. Front. Optoelectron., 2016, 9(1): 87-92.
 URL:  
http://journal.hep.com.cn/foe/EN/10.1007/s12200-016-0596-1
http://journal.hep.com.cn/foe/EN/Y2016/V9/I1/87
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Zhiqian WU
Yue SHEN
Xiaoqiang LI
Qing YANG
Shisheng LIN
Fig.1  ?(a) Optical image of the graphene-ZnO nanowire heterojunction; (b) Raman spectrum of the graphene; (c) I-V curve of a ZnO nanowire with Ag paste contacting at both ends; (d) microscopic image of the graphene-ZnO heterojunction marked as sample LED 1# at a forward bias of 6 V; (e) I-V curve of LED 1#; (f) light emission spectrum of LED 1# at a forward bias of 6 V
Fig.2  ? PL spectrum of the ZnO nanowire
Fig.3  ?(a) Microscopic image of the graphene-ZnO heterojunction labeled as LED 2#; (b) I-V curve of the LED 2#; (c) spectrum of emitted light at different forward bias voltages; (d) microscopic image of the device with forward bias at 20 V
Fig.4  ?(a) and (b) HRTEM image of ZnO nanowire with a rough surface; (c) and (d) TEM image of a smooth ZnO nanowire coated with graphene
Fig.5  ?Schematic electronic band structure of (a) separated ZnO nanowire and graphene; (b) graphene-ZnO nanowire Schottky junction; (c) Schottky junction under forward bias
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