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Frontiers of Optoelectronics

Front. Optoelectron.    2015, Vol. 8 Issue (3) : 298-305     DOI: 10.1007/s12200-014-0372-z
RESREARCH ARTICLE |
High conductive and transparent Al doped ZnO films for a-SiGe:H thin film solar cells
Qingsong LEI(),Jiang LI
School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
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Abstract

Al doped zinc oxide (AZO) films were prepared by mid-frequency magnetron sputtering for silicon (Si) thin film solar cells. Then, the influence of deposition parameters on the electrical and optical properties of the films was studied. Results showed that high conductive and high transparent AZO thin films were achieved with a minimum resistivity of 2.45 × 10-4 Ω?cm and optical transmission greater than 85% in visible spectrum region as the films were deposited at a substrate temperature of 225°C and a low sputtering power of 160 W. The optimized films were applied as back reflectors in a-SiGe:H solar cells. A relative increase of 19% in the solar cell efficiency was achieved in comparison to the cell without the ZnO films doped with Al (ZnO:Al).

Keywords Al doped zinc oxide (AZO) films      magnetron sputtering technology      growth      electrical and optical properties      a-SiGe:H solar cells     
Corresponding Authors: Qingsong LEI   
Online First Date: 04 April 2014    Issue Date: 18 September 2015
 Cite this article:   
Qingsong LEI,Jiang LI. High conductive and transparent Al doped ZnO films for a-SiGe:H thin film solar cells[J]. Front. Optoelectron., 2015, 8(3): 298-305.
 URL:  
http://journal.hep.com.cn/foe/EN/10.1007/s12200-014-0372-z
http://journal.hep.com.cn/foe/EN/Y2015/V8/I3/298
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Qingsong LEI
Jiang LI
Fig.1  Influence of working pressure on resistivity, carrier concentration and Hall mobility of AZO thin films
Fig.2  Influence of substrate temperature on resistivity, mobility and Hall concentration of AZO thin films
Fig.3  Influence of sputtering power on resistivity, carrier concentration and Hall mobility of AZO thin films
Fig.4  Influence of working pressure on transmission and band gap of AZO thin films
Fig.5  Influence of substrate temperature on transmission and band gap of AZO thin films
Fig.6  Influence of sputtering power on transmission and band gap of AZO thin films
Fig.7  Structure of a-SiGe:H solar cells with (a) and without (b) ZnO:Al back reflector
Fig.8  I-V characteristics of a-SiGe:H solar cells with and without ZnO:Al back reflector
type Voc/V JSC/(mA·cm-2) FF η/%
without AZO back reflector 0.83 13.90 0.62 7.15
with AZO back reflector 0.84 14.65 0.70 8.51
Tab.1  Performances of p-i-n single junction a-SiGe:H solar cells prepared with and without AZO films back reflector
1 Nakagawara O, Kishimoto Y, Seto K, Koshido Y, Yoshino Y, Makino T. Moisture-resistant ZnO transparent conductive films with Ga heavy doping. Applied Physics Letters, 2006, 89(9): 091904-1–091904-3
doi: 10.1063/1.2337542
2 Bhosle V, Tiwari A, Narayan J. Metallic conductivity and metal-semiconductor transition in Ga-doped ZnO. Applied Physics Letters, 2006, 88(3): 032106-1–032106-3
doi: 10.1063/1.2165281
3 Vandendonker M, Gordijn A, Stiebig H, Finger F, Rech B, Stannowski B, Bartl R, Hamers E, Schlatmann R, Jongerden G. Flexible amorphous and microcrystalline silicon tandem solar modules in the temporary superstrate concept. Solar Energy Materials and Solar Cells, 2007, 91(7): 572–580
doi: 10.1016/j.solmat.2006.11.012
4 Hao X T, Ma J, Zhang D H, Yang Y G, Ma H L, Cheng C F, Liu X D. Comparison of the properties for ZnO:Al films deposited on polyimide and glass substrates. Materials Science and Engineering B, 2002, 90(1–2): 50–54
doi: 10.1016/S0921-5107(01)00828-5
5 Vanheusden K, Warren W L, Seager C H, Tallant D R, Voigt J A, Gnade B E. Mechanisms behind green photoluminescence in ZnO phosphor powders. Journal of Applied Physics, 1996, 79(10): 7983–7990
doi: 10.1063/1.362349
6 Chopra K L, Major S, Pandya D K. Transparent conductors-a status review. Thin Solid Films, 1983, 102(1): 1–46
doi: 10.1016/0040-6090(83)90256-0
7 Granqvist C G. Window coatings for the future. Thin Solid Films, 1990, 193–194(Part 2): 730–741
doi: 10.1016/0040-6090(90)90225-3
8 Zhang D H, Yang T L, Ma J, Wang Q P, Gao R W, Ma H L. Preparation of transparent conducting ZnO:Al films on polymer substrates by r.f. magnetron sputtering. Applied Surface Science, 2000, 158(1–2): 43–48
doi: 10.1016/S0169-4332(99)00591-7
9 Fortunato E, Nunes P, Marques A, Costa D, águas H, Ferreira I, Costa M E V, Godinho M H, Almeida P L, Borges J P, Martins R. Transparent, conductive ZnO:Al thin film deposited on polymer substrates by RF magnetron sputtering. Surface and Coatings Technology, 2002, 151–152(1): 247–251
doi: 10.1016/S0257-8972(01)01660-7
10 Suzuki A, Matsushita T, Wada N, Sakamoto Y, Okuda M. Trasparent conducting Al-doped ZnO thin films prepared by pulsed laser deposition. Japanese Journal of Applied Physics, 1996, 35(Part 2, No. 1A): L56–L59
doi: 10.1143/JJAP.35.L56
11 Minami T, Sato H, Sonohara H, Takata S, Miyata T, Fukuda I. Preparation of milky transparent conducting ZnO films with textured surface by atmospheric chemical vapour desposition using Zn(C5H7O2)2. Thin Solid Films, 1994, 253(1–2): 14–19
doi: 10.1016/0040-6090(94)90286-0
12 Song J, Park I J, Yoon K H. Electrical and optical properties of ZnO thin films prepared by the pyrosol method. Journal of the Korean Physical Society, 1996, 29(2): 219–224
13 Hu J H, Gordon R G. Textured aluminum–doped zinc oxide thin films from atmospheric pressure chemical–vapor deposition. Journal of Applied Physics, 1992, 71(2): 880–890
doi: 10.1063/1.351309
14 Lai K C, Wang J H, Lu C H, Tsai F J, Yeh C H, Houng M P. Plasma-induced TCO texture of ZnO:Ga back contacts on silicon thin film solar cells. Solar Energy Materials and Solar Cells, 2011, 95(2): 415–418
doi: 10.1016/j.solmat.2010.10.010
15 Zhang W D, Bunte E, Ruske F, Kohl D, Besmehn A, Worbs J, Siekmann H, Kirchhoff J, Gordijn A, Hüpkes J. As-grown textured zinc oxide films by ion beam treatment and magnetron sputtering. Thin Solid Films, 2012, 520(12): 4208–4213
doi: 10.1016/j.tsf.2011.04.098
16 Chen X L, Wang F, Geng X H, Zhang D K, Wei C C, Zhang X D, Zhao Y. New natively textured surface Al-doped ZnO-TCOs for thin film solar cells via magnetron sputtering. Materials Research Bulletin, 2012, 47(8): 2008–2011
doi: 10.1016/j.materresbull.2012.04.009
17 Kluth O, Schope G, Hüpkes J, Agashe C, Müller J, Rech B. Modified Thornton model for magnetron sputtered zinc oxide: film structure and etching behaviour. Thin Solid Films, 2003, 442(1–2): 80–85
doi: 10.1016/S0040-6090(03)00949-0
18 Mandal S, Singha R K, Dhar A, Ray S K. Optical and structural characteristics of ZnO thin films grown by rf magnetron sputtering. Materials Research Bulletin, 2008, 43(2): 244–250
doi: 10.1016/j.materresbull.2007.05.006
19 Ellmer K. Resistivity of polycrystalline zinc oxide films: current status and physical limit. Journal of Physics D, Applied Physics, 2001, 34(21): 3097–3108
doi: 10.1088/0022-3727/34/21/301
20 Fang G J, Li D J, Yao B L. Fabrication and vacuum annealing of transparent conductive ZAO thin films prepared by DC magnetron sputtering. Vacuum, 2002, 68(4): 363–372
doi: 10.1016/S0042-207X(02)00544-4
21 Oh B Y, Jeong M C, Myoung J M. Stabilization in electrical characteristics of hydrogen-annealed ZnO:Al films. Applied Surface Science, 2007, 253(17): 7157–7161
doi: 10.1016/j.apsusc.2007.02.181
22 Wolff P A. Theory of the band structure of very degenerate semiconductors. Physical Review, 1962, 126(2): 405–412
doi: 10.1103/PhysRev.126.405
23 Burstein E. Anomalous optical absorption limit in InSb. Physical Review, 1954, 93(3): 632–633
doi: 10.1103/PhysRev.93.632
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