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Frontiers of Chemical Science and Engineering

Front. Chem. Sci. Eng.    2019, Vol. 13 Issue (3) : 485-492
Improvement in growth yield of single-walled carbon nanotubes with narrow chirality distribution by pulse plasma CVD
Bin Xu1, Toshiro Kaneko1, Toshiaki Kato1,2()
1. Department of Electronic Engineering, Tohoku University, Sendai 980-8579, Japan
2. Japan Science and Technology Agency (JST)-PRESTO, Sendai 980-8579, Japan
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A pulse plasma chemical vapor deposition (CVD) technique was developed for improving the growth yield of single-walled carbon nanotubes (SWNTs) with a narrow chirality distribution. The growth yield of the SWNTs could be improved by repetitive short duration pulse plasma CVD, while maintaining the initial narrow chirality distribution. Detailed growth dynamics is discussed based on a systematic investigation by changing the pulse parameters. The growth of SWNTs with a narrow chirality distribution could be controlled by the difference in the nucleation time required using catalysts comprising relatively small or large particles as the key factor. The nucleation can be controlled by adjusting the pulse on/off time ratio and the total processing time.

Keywords single-walled carbon nanotubes      chirality-controlled synthesis      pulse plasma chemical vapor deposition     
Corresponding Authors: Toshiaki Kato   
Just Accepted Date: 24 June 2019   Online First Date: 30 July 2019    Issue Date: 22 August 2019
 Cite this article:   
Bin Xu,Toshiro Kaneko,Toshiaki Kato. Improvement in growth yield of single-walled carbon nanotubes with narrow chirality distribution by pulse plasma CVD[J]. Front. Chem. Sci. Eng., 2019, 13(3): 485-492.
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Bin Xu
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Toshiaki Kato
Fig.1  (a,b) Model for the growth of SWNTs with (a) long and (b) short growth times; (c) Imaging model of SWNT growth using the new pulse plasma CVD method.
Fig.2  (a–o) Raman measurement of SWNT growth with 6, 12, and 24 pulse repetitions; (a–c) G-band mapping; (b–f) corresponding Raman spectrum is marked in the map using a red cross; (i–o) RBM mapping at wavelengths of 300 cm–1 (g–m) and 200 cm–1 (h–n), and the corresponding RBM; (p) Yield and diameter distribution of SWNTs synthesized by pulse plasma CVD and continuous plasma CVD based on Raman measurement.
Fig.3  PLE mapping of SWNTs grown with different number of pulse repetitions. (a) 10 s × 3 times and (b) 15 times.
Fig.4  (a–c) AFM image and (d–f) histogram of the length of SWNTs grown with different pulse repetitions: (a,d) 3, (b,e) 6, and (c,f) 15 times; (g) Average SWNT length as a function of number of pulse repetitions.
Fig.5  Diameter distribution vs. pulse (a) on time with the off time fixed and (b) off time with the on time fixed; (c) diameter distribution vs. different pulse on and off times; (a–e) diameter distribution vs. total process time; (f) diameter distribution vs. pulse on/off time ratio; (a–f) are derived from PLE mapping data; (g–h) Calculated carbon dissolution rate vs. pulse on/off time ratio.
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